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首页> 外文会议>Conference on Design for Manufacturability through Design-Process Integration; 20080128-29; San Jose,CA(US) >DFM Application on Dual Tone Sub 50nm Device
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DFM Application on Dual Tone Sub 50nm Device

机译：DFM在双音次50nm器件上的应用

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摘要

As the semiconductor feature size continues to shrink, electrical resistance issue is becoming one of the industry's dreaded problems. In order to overcome such problem, many of the top semiconductor manufacturers have turned there interest to copper process. Widely known, copper process is the trench first damascene process which utilize dark tone mask instead of widely used clear tone mask. Due to unfamiliarity and under development of dark tone mask technology compared to clear tone mask, many have reported patterning defect issues using dark tone mask. Therefore, necessity of DFM[1] for design that meets both dark and clear tone is very large in development of copper process based device. In this study, we will propose a process friendly Design For Manufacturing (DFM) rule for dual tone mask. Proposed method guides the layout rule to give same performance from both dark tone and clear tone mask from same design layout. Our proposed method will be analyzed on photolithography process margin factors such as Depth Of Focus (DOF) and Exposure Latitude (EL) on sub 50nm Flash memory interconnection layer.
机译：随着半导体特征尺寸的不断缩小，电阻问题已成为业界可怕的问题之一。为了克服这种问题，许多顶级半导体制造商已经对铜工艺产生了兴趣。众所周知，铜工艺是沟槽第一镶嵌工艺，该工艺利用暗色调掩模而不是广泛使用的透明掩模。由于不熟悉，并且与透明色调掩模相比，深色色调掩模技术尚在开发中，因此许多人报告了使用深色色调掩模进行图案化缺陷的问题。因此，在基于铜工艺的器件的开发中，DFM [1]对于同时满足暗调和清晰调的设计的必要性非常大。在这项研究中，我们将为双音罩提出一种工艺友好的制造设计（DFM）规则。所提出的方法指导布局规则从相同设计布局的暗色调和透明蒙版获得相同的性能。我们提出的方法将在低于50nm闪存互连层的光刻工艺裕度因素（例如景深（DOF）和曝光纬度（EL））上进行分析。

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