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Vacuum delay effect of CAR in mask fabrication

机译:CAR在掩模制造中的真空延迟效应

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摘要

Delay effects were evaluated for various chemically amplified resist (CAR) types in view of exposure conditions, vacuum and atmosphere. Since the mask is exposed in the vacuum chamber for a long period of time, unexpected phenomenon has been emerging in CAR such as pattern degradation, line width variation owing to vacuum delay effect (VDE). In the acetal resist based on ethyl vinyl ether (EVE), the VDE emerges as space CD decrease, while post exposure delay (PED) in an optical process shows space CD increase. Acrylate resist and modified acetal resist are superior in VDE as well as PED to EVE resist. VDE seems to be caused by out-gassing. It can be overcome by choosing out-gassing free chemistry such as acrylate and modified acetal. An over-coating method was evaluated to prevent any volatile materials in CAR from being evaporated in the vacuum, but it is disclosed ineffective to VDE. CAR linearity reaches to 0.2μm, and its resist and Cr pattern as well as OPC was equivalent to current e-beam resist, ZEP7000. Finally, we can have achieve 8.3nm CD non-uniformity in 3sigma in 135X135mm~2 area that allows beyond 0.13μm device mask application.
机译:考虑到暴露条件,真空和大气,评估了各种化学放大抗蚀剂(CAR)类型的延迟效应。由于掩模长时间暴露在真空室中,因此在CAR中出现了意料不到的现象,例如图案退化,由于真空延迟效应(VDE)引起的线宽变化。在基于乙基乙烯基醚的缩醛抗蚀剂(EVE)中,随着空间CD的减少,VDE出现,而光学工艺中的曝光后延迟(PED)显示空间CD的增加。丙烯酸酯抗蚀剂和改性乙缩醛抗蚀剂在VDE以及PED上均优于EVE抗蚀剂。 VDE似乎是由排气引起的。可以通过选择脱气自由化学物质(例如丙烯酸酯和改性乙缩醛)来克服。为了防止CAR中的任何挥发性物质在真空中蒸发,已经评估了一种覆盖方法,但是公开了对VDE无效。 CAR线性度达到0.2μm,其抗蚀剂和Cr图案以及OPC相当于当前的电子束抗蚀剂ZEP7000。最后,我们可以在135X135mm〜2区域的3sigma中实现8.3nm的CD不均匀性,从而可以应用超过0.13μm的器件掩模。

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