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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Development of a High Average Power Extreme Ultraviolet Electric Capillary Discharge Source
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Development of a High Average Power Extreme Ultraviolet Electric Capillary Discharge Source

机译：高平均功率极紫外电毛细管放电源的研制

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摘要

Progress continues on the development of the EUV Electric Capillary Discharge Source. Over the past year we have studied the high average power operational characteristics, used interferometry to measure the in-capillary electron density, and further reduced the debris deposition rate on plasma facing optics. A pulser capable of driving the source at up to 1 kHz was acquired and preliminary testing is in progress. EUV flux and spectral emission measurements were made for pure xenon and xenon/helium mixtures using a new electrode designed to prevent debris from depositing on multilayer optics. Finally, through improvements in capillary and electrode design and material properties coupled with the assistance of mitigation approaches, we have been able to significantly reduce the amount of debris generated by the source thereby increasing the reflectance lifetime of plasma-facing optics.
机译：EUV电毛细管放电源的开发继续取得进展。在过去的一年中，我们研究了高平均功率工作特性，使用干涉测量法测量了毛细管内电子密度，并进一步降低了面向等离子体的光学器件上的碎屑沉积速率。已获得能够以高达1 kHz的频率驱动信号源的脉冲发生器，并且正在进行初步测试。使用新的电极设计用于防止杂物沉积在多层光学器件上，从而对纯氙气和氙气/氦气混合物进行了EUV通量和光谱发射测量。最后，通过改善毛细管和电极设计以及材料性能，并结合缓解方法，我们已经能够显着减少光源产生的碎屑量，从而延长了面向等离子体的光学元件的反射寿命。

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