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首页> 外文会议>Conference on Emerging Lithographic Technologies Ⅴ Feb 27-Mar 1, 2001, Santa Clara, USA >Development of an EUV reflectometer using a single line emission from a laser plasma X-ray source
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Development of an EUV reflectometer using a single line emission from a laser plasma X-ray source

机译：使用激光等离子X射线源的单线发射技术开发EUV反射仪

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摘要

We have successfully developed a simple, laboratory-sized EUV reflectometer "EUMOR" (Extreme Ultraviolet Monochromatic Reflectometer). A CO_2 gas-jet-target laser-plasma source was employed as the EUV source for EUMOR. EUMOR uses a single line emission at the wavelength of 12.98 run from a CO_2 gas-jet-target laser-plasma source without a grating, therefore it can achieve simultaneous high spectral resolution and high throughput. The intensity of EUV emission from the CO_2 gas-jet-target laser-plasma was quantitatively evaluated, and the EUV flux that irradiated the surface of a sample was estimated to be 5x10~5 photons/shot. Four Mo/Si multilayer mirrors which were deposited under the same conditions with different layer periods were measured by EUMOR. The parameters of these multilayer mirrors, which were obtained by parameter fitting to the measured angular distribution of the reflectivity, showed good agreement with each other, demonstrating the reliability of EUMOR data.
机译：我们已经成功开发了一种简单的，实验室规模的EUV反射仪“ EUMOR”（极端紫外单色反射仪）。使用CO_2气体喷射目标激光等离子体源作为EUMOR的EUV源。 EUMOR使用来自CO_2气体目标激光等离子源的无光栅的单线发射波长为12.98，因此可以同时实现高光谱分辨率和高通量。定量评估了从CO_2气体目标激光等离子体发射的EUV的强度，估计照射到样品表面的EUV通量为5x10〜5光子/发射。通过EUMOR测量在相同条件下以不同的层周期沉积的四个Mo / Si多层镜。这些多层反射镜的参数是通过对反射率的角度分布进行参数拟合获得的，彼此之间显示出良好的一致性，证明了EUMOR数据的可靠性。

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