• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Emerging Lithographic Technologies VI Pt.1, Mar 5-7, 2002, Santa Clara, USA >Static Microfield Printing at the Advanced Light Source with the ETS Set-2 Optic
【24h】

Static Microfield Printing at the Advanced Light Source with the ETS Set-2 Optic

机译：使用ETS Set-2光学元件在高级光源上进行静态微场打印

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

While interferometry is routinely used for the characterization and alignment of lithographic optics, the ultimate performance metric for these optics is printing in photoresist. The comparison of lithographic imaging with that predicted from wavefront performance is also useful for verifying and improving the predictive power of wavefront metrology. To address these issues, static, small-field printing capabilities have been added to the EUV phase-shifting point diffraction interferometer (PS/PDI) implemented at the Advanced Light Source at Lawrence Berkeley National Laboratory. The combined system remains extremely flexible in that switching between interferometry and imaging modes can be accomplished in approximately two weeks. Relevant printing studies with the ETS projection optics require illumination partial coherence with a of approximately 0.7. However, this a value is very different from the coherent illumination naturally provided by synchrotron undulator beamline and required by the high accuracy EUV PS/PDI. Adding printing capabilities to the PS/PDI experimental system has thus necessitated the development of an alternative illumination system capable of quantitatively reducing the inherent coherence of the beamline. The implemented illuminator is an angular scanning system capable of in situ coherence control. Moreover, this illuminator design readily enables the implementation of conventional resolution-enhancing pupil fills and modeling of the unique Engineering Test Stand (ETS) pupil fill. This new static microfield exposure tool has been used to lithographically characterize the static imaging performance of the ETS Set-2 projection optics. Excellent performance has been demonstrated down to the 70-nm 1:1 line/space level with a focus latitude exceeding 1 μm and a dose latitude of approximately 8%. Moreover, dense-line printing down to a resolution of 50 nm has been demonstrated.
机译：虽然通常将干涉测量法用于光刻光学器件的表征和对准，但这些光学器件的最终性能指标是在光刻胶中进行印刷。将光刻成像与根据波前性能预测的图像进行比较，对于验证和改善波前计量学的预测能力也很有用。为了解决这些问题，已在劳伦斯伯克利国家实验室的高级光源中实现的EUV相移点衍射干涉仪（PS / PDI）中增加了静态的小范围打印功能。组合系统仍然非常灵活，可以在大约两周内完成干涉测量和成像模式之间的切换。 ETS投影光学系统的相关印刷研究要求照明局部相干度约为0.7。但是，该值与同步加速器波荡器光束线自然提供的高精度EUV PS / PDI要求的相干照明完全不同。因此，为PS / PDI实验系统增加打印功能需要开发出一种替代照明系统，该系统能够定量减少光束线的固有相干性。实施的照明器是能够进行原位相干控制的角度扫描系统。此外，这种照明器设计可以轻松实现传统的提高分辨率的瞳孔填充，并可以对独特的工程测试台（ETS）瞳孔填充进行建模。这种新的静态微场曝光工具已用于光刻表征ETS Set-2投影光学系统的静态成像性能。在低至70 nm 1：1线/空间水平的情况下，已经证明了出色的性能，聚焦范围超过1μm，剂量范围大约为8％。此外，已经证明了低至50 nm分辨率的密集线打印。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号