首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Shrink Assist Film for Enhanced Resolution (SAFIER~(TM)) Process for Printing of 20 nm Trenches with High Aspect Ratio
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Shrink Assist Film for Enhanced Resolution (SAFIER~(TM)) Process for Printing of 20 nm Trenches with High Aspect Ratio

机译:用于增强分辨率(SAFIER〜(TM))工艺的收缩辅助膜,用于印刷高纵横比的20 nm沟槽

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SAFIER~(TM) process has been applied to electron beam lithography for the fabrication of the write pole for thin film heads (TFH). The SAFIER~(TM) process is a physical shrinkage process designed to shrink trench patterns and contact holes with very little deterioration of the profile. This process also improves line edge roughness (LER). In this paper, we will present the experimental results about our evaluation of the SAFIER~(TM) process for write pole process. To understand the SAFIER~(TM) process, our evaluation will focus on the following key processing issues: 1) SAFIER~(TM) resolution capability; 2) repetition of the SAFIER~(TM) process; 3) process optimization for the minimum CD variation; 4) resist sidewall profile; and 5) LER with the SAFIER~(TM) process. We demonstrate the capability of printing narrow write pole trench patterns with a critical dimension (CD) of 20 nm in 0.30 nm resist (aspect ratio= 15:1) and a CD of 30 nm in 0.60 μm resist (aspect ratio= 20:1) using the electron beam SAFIER~(TM) process.
机译:SAFIERTM工艺已经应用于电子束光刻,以制造用于薄膜头(TFH)的写极。 SAFIERTM工艺是一种物理收缩工艺,旨在收缩沟槽图案和接触孔,而轮廓的破坏很少。此过程还可以改善线条边缘粗糙度(LER)。在本文中,我们将提供有关评估SAFIER〜(TM)工艺用于写极工艺的实验结果。为了了解SAFIER〜(TM)过程,我们的评估将集中在以下关键处理问题上:1)SAFIER〜(TM)解析能力; 2)重复SAFIER〜(TM)过程; 3)为使CD变化最小而优化工艺; 4)抵抗侧壁轮廓; 5)带有SAFIER〜(TM)流程的LER。我们展示了在0.30 nm抗蚀剂(长宽比= 15:1)中打印临界尺寸(CD)为20 nm的窄写极沟槽图案的能力,在0.60μm抗蚀剂中(长宽比= 20:1)可以打印30 nm的窄写极沟槽图案的能力。 )使用电子束SAFIER〜(TM)工艺。

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