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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >High Throughput EUV-Reflectometer for EUV Mask-Blanks
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High Throughput EUV-Reflectometer for EUV Mask-Blanks

机译：高通量EUV反射仪，用于EUV掩模空白

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A prototype of a reflectometer for masks and mask blanks has been set-up in autumn 2003 for in-house quality check of EUV mask blanks at Schott Lithotec. The target specifications are those under discussion as SEMI standard for EUV mask blank reflectometry. Additionally, the identified demands for semiconductor capital investment for future actinic EUV metrology, high throughputs and small measuring spots, were taken into account for the tool development. Effective use of the emission from a laboratory discharge source is achieved by using polychromatic reflectometry, which has been shown to deliver results about a factor of 100 faster with the same source power and needs less mechanical overhead than a monochromatic reflectometer. The hardware concept, first results and discussion of a test of the performance with respect to resolution, uncertainty and reproducibility will be represented. Jointly with the Physikalisch-Technische Bundesanstalt's laboratory for radiometry at BESSY II the traceability to storage ring metrology, the calibration and the validation of the concepts will be assessed.
机译：用于口罩和口罩毛坯的反射仪的原型已于2003年秋季建立，用于在Schott Lithotec进行内部EUV口罩毛坯的质量检查。目标规范是作为EUV掩模空白反射仪的SEMI标准正在讨论的规范。此外，在开发工具时还考虑了已确定的对未来光化EUV计量，高通量和小测量点的半导体资本投资的需求。通过使用多色反射计，可以有效利用实验室排放源的发射，与单色反射计相比，已证明在相同的源功率下，该方法可以更快地将结果提高约100倍，并且所需的机械开销更少。将介绍硬件概念，初步结果以及关于分辨率，不确定性和可再现性的性能测试的讨论。与位于BESSY II的Physikalisch-Technische Bundesanstalt放射线学实验室联合，对存储环计量学的可追溯性，校准和概念验证进行评估。

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