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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Metrology tools for EUV-source characterization and optimization
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Metrology tools for EUV-source characterization and optimization

机译：用于EUV源表征和优化的计量工具

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摘要

The development of suitable radiation sources for extreme ultraviolet lithography (EUVL) is a major challenge. For the optimization of these sources and for the determination of the parameters needed for the system design and the system integration these sources have to be characterized in terms of the absolute in-band power, the spectral distribution in the EUV spectral region and the out-of-band spectral regions, the spatial distribution of the emitting volume and the angular distribution of the emission. For improving the lifetime of such sources, generally accepted as one key risk with EUVL, another task, the debris emitted from sources under development has to be investigated. Therefore, JENOPTIK Mikrotechnik GmbH is co-operating with the Laser Laboratorium Goettingen, the Physikalisch-Technische Bundesanstalt (PTB) and the AIXUV GmbH in developing ready-for-use metrology tools for EUVL source characterization and optimization. The set of the tools employed for EUV-source characterization is presented in detail as well as concepts for calibration and measurement procedures.
机译：开发适用于极紫外光刻（EUVL）的辐射源是一项重大挑战。为了优化这些信号源，并确定系统设计和系统集成所需的参数，必须根据绝对带内功率，EUV频谱区域中的频谱分布和带光谱区域，发射体积的空间分布和发射的角度分布。为了延长通常被认为是EUVL的一项主要风险（另一项任务）的此类源的寿命，必须对正在开发中的源发出的碎片进行调查。因此，JENOPTIK Mikrotechnik GmbH正在与Goettingen激光实验室，Physikalisch-Technische Bundesanstalt（PTB）和AIXUV GmbH合作，开发用于EUVL源表征和优化的现成计量工具。详细介绍了用于EUV源表征的工具集以及校准和测量程序的概念。

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