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首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Aerial image characterization for the defects in the extreme ultraviolet mask
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Aerial image characterization for the defects in the extreme ultraviolet mask

机译：极紫外掩模中缺陷的航空影像表征

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摘要

Simulation has been used to predict the aerial images for masks with defect free multilayer and with defect in multilayer. Mask defects are easily produced in extreme ultraviolet lithography mask fabrication process because 40 Mo/Si multilayer films are stacked and each stack is made from 2 to 4 nm. In this case, multilayer can be stacked with defects and with slightly different heights. It is hard to achieve an aerial image which we want to get. This paper discusses various image properties when there are no defects and when there are different kinds of defects on multilayer. The results were calculated by using SOLID-EUV of Simga-C. The aerial images caused by defects on the multilayer are characterized.
机译：模拟已被用于预测具有无缺陷多层和具有多层缺陷的掩模的航空图像。由于堆叠了40个Mo / Si多层膜，并且每个堆叠的厚度为2-4 nm，因此在极紫外光刻掩模制造过程中容易产生掩模缺陷。在这种情况下，多层可以堆叠有缺陷并且高度略有不同。很难获得我们想要获得的航空影像。本文讨论了无缺陷时和多层上存在不同类型缺陷时的各种图像特性。通过使用Simga-C的SOLID-EUV来计算结果。表征了由多层缺陷引起的航空图像。

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