Exposure Simulation of Electron Beam Microcolumn Lithography

机译：电子束微柱光刻的曝光模拟

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We propose an improved method to describe the electron-resist interaction based on Dill's model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill's model. Our simulation profiles show a good agreement with experimental profiles.

机译：我们提出了一种改进的方法来描述基于Dill模型的电子-电阻相互作用，以进行曝光模拟。为此，进行了蒙特卡洛模拟以获得化学放大的抗蚀剂中的能量强度分布。用于弹性散射的列表Mott数据，用于非弹性散射的Moller和Vriens横截面，以及修正的Bethe方程加上离散的能量损耗（用于能量损耗）用于计算能量强度分布。通过电子-抗蚀剂相互作用，通过使用改进的Dill模型，能量强度分布将抗蚀剂成分改变成曝光产物，例如光酸浓度或内部具有各种图案形状的光致抗蚀剂中的光酸产生剂。我们的模拟资料与实验资料显示出良好的一致性。

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来源
《Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US》|2004年|P.1100-1104|共5页
会议地点 Santa Clara CA(US)
作者
Sang-Kon Kim; Hye-Keun Oh;
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作者单位

Department of Applied Physics, Hanyang University, Ansan, Korea;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
electron beam lithography; multicolumn lithography; electron beam microcolumn lithography; exposure simulation; dill's model;

机译：电子束光刻；多柱光刻；电子束微柱光刻；曝光模拟；莳萝模型;

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Exposure Simulation of Electron Beam Microcolumn Lithography

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