首页> 外文会议>Conference on Emerging Lithographic Technologies VIII pt.2; 20040224-20040226; Santa Clara,CA; US >Experimental study on basic properties of laser-produced EUV plasmas on GEKKO-XII laser facility
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Experimental study on basic properties of laser-produced EUV plasmas on GEKKO-XII laser facility

机译:GEKKO-XII激光设备上激光产生的EUV等离子体基本特性的实验研究

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摘要

Extremely ultraviolet (EUV) light at around 13.5 nm of wavelength is the most probable candidate of the light source for lithography for semiconductors of next generation. We have been studying about the EUV light source from laser-produced plasma. Detailed understanding of the EUV plasma is required for developments of modeling with simulation codes. Several parameters should be experimentally measured to develop the important issues in the simulation codes. We focused on density profile, properties of EUV emission, and opacity of the laser-produced plasmas. We present recent experimental results on these basic properties of the laser-produced EUV plasmas.
机译:波长约为13.5 nm的极紫外(EUV)光是下一代半导体光刻技术的最有可能的候选光源。我们一直在研究激光产生的等离子体产生的EUV光源。开发带有仿真代码的模型需要对EUV等离子体有详细的了解。应该对几个参数进行实验测量,以开发出仿真代码中的重要问题。我们关注密度分布,EUV发射的特性以及激光产生的等离子体的不透明度。我们目前对激光产生的EUV等离子体的这些基本特性的实验结果。

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