首页> 外文会议>Conference on Environmental Monitoring and Remediation III; Oct 28-30, 2003; Providence, Rhode Island, USA >Advanced high-power superluminescent light sources for environmental, chemical, and biological sensing applications
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Advanced high-power superluminescent light sources for environmental, chemical, and biological sensing applications

机译:用于环境,化学和生物传感应用的高级大功率超发光光源

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In this paper we demonstrate high-power GaAs-based and InP-based superluminescent diodes (SLD) with tilted waveguides emitting in 8xx nm and 15xx nm spectral ranges respectively. The analysis of devices with different cavity lengths emphasizes the tradeoff between output power and spectral width. Power levels of about 200 mW for 820 nm SLDs and about 100 mW for 1590 nm SLDs have been demonstrated for longer cavity devices. Spectral modulation was less than 6-7% at 70-80 mW output power for both 8xx and 15xx SLDs. Simple model proposed for evaluation of spectrum modulation for both GaAs and InP devices based on semi-empirical approach is in agreement with experimental observations.
机译:在本文中,我们演示了带有倾斜波导的大功率基于GaAs和InP的超发光二极管(SLD),它们分别在8xx nm和15xx nm光谱范围内发射。对具有不同腔长的器件的分析强调了输出功率与频谱宽度之间的权衡。对于更长腔体的器件,已经证明820 nm SLD的功率水平约为200 mW,1590 nm SLD的功率水平约为100 mW。对于8xx和15xx SLD,在70-80 mW输出功率下,频谱调制小于6-7%。基于半经验方法提出的用于评估GaAs和InP器件的频谱调制的简单模型与实验观察结果一致。

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