Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process

Xu Cheng-Dong; Du Guo-Tong; Song Jun-Feng; Huang Yong-Zhen

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Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process

机译：量子阱混合技术增强大功率1.5μm集成超发光光源的光谱宽度

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A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridge-waveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing. The spectral width was broadened from the 16 nm of the normal devices to 37 nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectral width of 37 nm.

机译：基于具有选择性区域量子阱（QW）混合的倾斜脊波导结构，制造了一种新型的集成式InGaAsP超发光光源。沿着器件长度的带隙结构通过无杂质空位扩散QW混合而改变。在相同的输出功率水平下，光谱宽度从普通器件的16 nm扩展到QW混合增强器件的37 nm。在脉冲条件下获得高超发光功率（210 mW），光谱宽度为37 nm。

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《Chinese physics letters》 |2004年第5期|共3页
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Xu Cheng-Dong; Du Guo-Tong; Song Jun-Feng; Huang Yong-Zhen;
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中图分类物理学;
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1. Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process [J] . Xu Cheng-Dong, Du Guo-Tong, Song Jun-Feng, Chinese physics letters . 2004,第5期

机译：量子阱混合技术增强大功率1.5μm集成超发光光源的光谱宽度
2. Spectral characteristics of high-power 1.5 mu m broad-band superluminescent fiber sources [J] . Wysocki P.F., Digonnet M.J.F. IEEE Photonics Technology Letters . 1990,第3期

机译：高功率1.5μm宽带超发光光纤光源的光谱特性
3. High-power integrated superluminescent light source [J] . Guotong Du, Chengdong Xu, Yang Liu, IEEE Journal of Quantum Electronics . 2003,第1期

机译：大功率集成超发光光源
4. 1.5μm High-power Integrated Superluminescent Light Source [C] . Chengdong Xu, Guotong Du, Yang Liu, Conference on Materials and Devices for Optical and Wireless Communications, Oct 15-18, 2002, Shanghai, China . 2002

机译：1.5μm大功率集成超发光光源
5. ovel InP Based High-Power and High-Efficiency, Single Quantum Well (SQW) Active Region Diode Laser, Emitting at 1.5 microm. [D] . Garrod, Toby J. 2015

机译：ovel基于InP的高功率，高效率，单量子阱（SQW）有源区二极管激光器，发射功率为1.5微米。
6. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures [O] . Siming Chen, Wei Li, Ziyang Zhang, 2015

机译：通过使用混合量子阱/量子点结构的具有290nm发射带宽的基于GaAs的超发光发光二极管
7. Integrated Quantum Optics: Experiments towards integrated quantum-light sources and quantum-enhanced sensing [O] . Hoff Ulrich Busk, Andersen Ulrik Lund 2015

机译：集成量子光学：集成量子光源和量子增强传感的实验

Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process

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