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首页> 外文会议>Conference on laser applications in microelectronic and optoelectronic manufacturing VII; 20090126-29; San Jose, CA(US) >Optical Characterization of the Mask Writing Process in Bimetallic Grayscale Photomasks
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Optical Characterization of the Mask Writing Process in Bimetallic Grayscale Photomasks

机译：双金属灰度光掩模中掩模写入工艺的光学表征

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Bimetallic thin films of Bi/In and Sn/In oxidize becoming transparent under laser exposure. By controlling the laser power, direct-write binary and grayscale photomasks can be produced with the mask's transparency, or optical density (OD), ranging between ～3.0 (unexposed) to <0.22 OD (fully exposed). An OD measurement system has been developed that provides real time OD and laser exposure power measurements while the masks are being written. Measurements are obtained for each combination of films, characterizing their response when patterned with a raster-scanned v-groove mask. The characterization is performed by writing v-groove step patterns and modifying the mask's writing parameters such as velocity, line spacing and step width. Stationary results demonstrate Sn/In takes longer to expose compared to Bi/In. With a moving beam, the oxidation of Sn/In also occurs over a wider power range suggesting film materials with delayed or slower oxidations may offer power ranges that are better suited for grayscale masks. A narrow power range is less desirable for grayscale as more control is required over the writing laser. The stationary exposures also demonstrate both films can produce >64 distinct OD levels provided there is sufficient control over the laser power and exposure duration. The physical characteristics of the films are also examined to determine a more accurate method of verifying each film's composition. Combining weight, area, and thickness measurements allows for better characterization of the films as the thickness for bi-layer films are found to differ significantly from the sum of the individual layers.
机译：Bi / In和Sn / In的双金属薄膜在激光照射下会氧化成透明的。通过控制激光功率，可以生产直写式二进制和灰度光掩模，其掩模的透明度或光密度（OD）在〜3.0（未曝光）到<0.22 OD（完全曝光）之间。已经开发了OD测量系统，其在写入掩模时提供实时的OD和激光曝光功率测量。获得每种膜组合的测量值，表征在用光栅扫描的v形槽掩模进行构图时其响应。通过写入v槽台阶图案并修改掩模的写入参数（例如速度，行距和台阶宽度）来执行表征。静态结果表明，与Bi / In相比，Sn / In的暴露时间更长。在移动光束的情况下，Sn / In的氧化也会在较宽的功率范围内发生，这表明氧化延迟或较慢的薄膜材料可能会提供更适合于灰度掩模的功率范围。由于需要对写入激光器进行更多控制，因此对于灰度而言，窄功率范围是不希望的。静态曝光还表明，只要对激光功率和曝光时间有足够的控制，两种胶片都可以产生> 64个不同的OD值。还检查了薄膜的物理特性，以确定更准确的方法来验证每个薄膜的成分。结合重量，面积和厚度的测量值可以更好地表征膜，因为发现双层膜的厚度与各个层的总和显着不同。

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