• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light Jun 5-8, 2000, Pultusk, Poland >Spectroellipsometric investigation of GaSb surfaces after their chemical wet etching
【24h】

Spectroellipsometric investigation of GaSb surfaces after their chemical wet etching

机译：GaSb表面化学湿蚀刻后的分光光度法研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Procedure of chemical preparation of GaSb and particularly wet etching of GaSb surface is still optimized. Properties of surface layers depend on applied etchant. Spectroscopic ellipsometry (SE) is a very sensitive and allows estimation both thickness and layer stechiometry. Best process, which gives thinnest layer, can be determined directly from spectroscopic ellipsometry measurement. Optical properties of surface GaSb oxide often differ from described by Zolner. To determine thickness and refraction index of thin layers optical model of investigated structure is required. By comparing results of calculations for different models best one was found. Layers thicknesses and approximate refraction indices were determined for the surface layers after different etching.
机译：GaSb的化学制备方法，特别是GaSb表面的湿法蚀刻工艺仍在优化中。表面层的性质取决于所施加的蚀刻剂。椭圆偏振光谱法（SE）非常敏感，可以估算厚度和层厚度。可以给出最薄层的最佳工艺可以直接从椭圆偏振光谱测量中确定。表面GaSb氧化物的光学性质通常与Zolner所描述的不同。为了确定薄层的厚度和折射率，需要研究结构的光学模型。通过比较不同模型的计算结果，找到了最好的一种。在不同蚀刻之后确定表面层的层厚度和近似折射率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号