Novel MEMS Devices and Silicon Micromachined Components for High Frequency Circuits

机译：新型MEMS器件和用于高频电路的硅微机械部件

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This paper discusses recent developments in MEMS devices and Si-micromachined circuits. Specifically, the issue of poor isolation in individual MEMS switches is addressed in the context on creative designs that lead to the development of very-high isolation MEMS switch architectures operating in a very broad frequency range. Furthermore, Si-micromachined circuits appropriate for use in modern communications systems are described, and novel K- thru W-band three-dimensional multi-layer architectures are presented.

机译：本文讨论了MEMS器件和硅微机械电路的最新发展。具体而言，在具有创新性的设计中解决了单个MEMS开关中隔离度差的问题，该创造性设计导致了在非常宽的频率范围内工作的超高隔离度MEMS开关架构的发展。此外，描述了适用于现代通信系统的硅微机械电路，并提出了新颖的K到W波段三维多层体系结构。

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《Conference on MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication Oct 22-23, 2001, San Francisco, USA》|2001年|p.60-65|共6页
会议地点 San Francisco CA(US)
作者
Linda P. B. Katehi;
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作者单位

Department of Electrical Engineering, and Computer Science The Radiation Laboratory University of Michigan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Novel MEMS Devices and Silicon Micromachined Components for High Frequency Circuits

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