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首页> 外文会议>Conference on MEMS Reliability for Critical Applications 20 September 2000 Santa Clara, USA >Electrostatic Discharge/Electrical Overstress Susceptibility in MEMS: A New Failure Mode
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Electrostatic Discharge/Electrical Overstress Susceptibility in MEMS: A New Failure Mode

机译：MEMS中的静电放电/电超应力敏感性：新的失效模式

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摘要

Electrostatic discharge (ESD) and electrical overstress (EOS) damage of Micro-Electro-Mechanical Systems (MEMS) has been identified as a new failure mode. This failure mode has not been previously recognized or addressed primarily due to the mechanical nature and functionality of these systems, as well as the physical failure signature that resembles stiction. Because many MEMS devices function by electrostatic actuation, the possibility of these devices not only being susceptible to ESD or EOS damage but also having a high probability of suffering catastrophic failure due to ESD or EOS is very real. Results from previous experiments have shown stationary comb fingers adhered to the ground plane on MEMS devices tested in shock, vibration, and benign environments (1, 2). Using Sandia polysilicon microengines, we have conducted tests to establish and explain the ESD/EOS failure mechanism of MEMS devices. These devices were electronically and optically inspected prior to and after ESD and EOS testing. This paper will address the issues surrounding MEMS susceptibility to ESD and EOS damage as well as describe the experimental method and results found from ESD and EOS testing. The tests were conducted using conventional IC failure anlaysis and reliability assessment characterization tools. In this paper we will also present a thermal model to accurately depict the heat exchange between an electrostatic comb finger and the ground plane during an ESD event.
机译：微机电系统（MEMS）的静电放电（ESD）和电气过应力（EOS）损坏已被确定为一种新的故障模式。主要由于这些系统的机械性质和功能，以及类似于静摩擦的物理故障特征，以前尚未认识到或解决这种故障模式。由于许多MEMS器件是通过静电驱动来工作的，因此这些器件不仅容易受到ESD或EOS损害的可能性，而且由于ESD或EOS遭受灾难性故障的可能性很高，这是非常现实的。先前实验的结果表明，固定梳齿附着在经过冲击，振动和良性环境测试的MEMS器件的接地面上（1、2）。我们使用Sandia多晶硅微引擎进行了测试，以建立和解释MEMS器件的ESD / EOS故障机理。在ESD和EOS测试之前和之后，对这些设备进行了电子和光学检查。本文将解决有关MEMS易受ESD和EOS损坏的问题，并描述ESD和EOS测试的实验方法和结果。使用常规的IC故障分析和可靠性评估表征工具进行了测试。在本文中，我们还将介绍一个热模型，以准确描述在ESD事件期间静电梳状指状物与接地平面之间的热交换。

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