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首页> 外文会议>Conference on Micro- and Nanoelectronics; 20031006-20031010; Zvenigorod; RU >Bi film growing for nanowire fabrication
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Bi film growing for nanowire fabrication

机译：双膜生长用于纳米线制造

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摘要

A technology of smooth 15-50 nm thin Bi-film fabrication with the surface roughness of about 1 nm using two ultrahigh vacuum film growth methods, partially ionized beam deposition (PIBD) and molecular beam deposition (MBD), was developed. The dependence of film surface morphology on the key growth parameters, deposition rate, growth temperature, film thickness, and deposited particles energy was investigated by atomic force microscopy, and optimum growth conditions were determined. In the case of PIBD method, the accelerating voltage was found to influence the surface morphology most distinctly. The most uniform and smooth films with equal size grains and minimum roughness of 1 nm were grown at the accelerating voltage 3-4 kV. It was also found that bismuth films grown under the optimum condition 4 kV become continuous when the film thickness is more than 10 nm. In the case of MBD method, a decrease of the growth temperature down to 40℃ substantially suppresses the growth of surface hillocks and the film surface roughness is reduced down to 1 nm. The obtained results can promote developing a nanotechnology for nanowire and quantum-well structure fabrication using thin semi-metallic Bi films.
机译：开发了一种使用部分离子束沉积（PIBD）和分子束沉积（MBD）两种超高真空薄膜生长方法，以大约1 nm的表面粗糙度平滑制作15-50 nm薄型Bi薄膜的技术。通过原子力显微镜研究了膜表面形态对关键生长参数，沉积速率，生长温度，膜厚度和沉积颗粒能量的依赖性，并确定了最佳生长条件。在PIBD法的情况下，发现加速电压最明显地影响表面形态。在3-4 kV的加速电压下，生长出晶粒尺寸相等，最小粗糙度为1 nm的最均匀，最光滑的薄膜。还发现当膜厚度大于10nm时，在4kV的最佳条件下生长的铋膜变得连续。在MBD法的情况下，将生长温度降低至40℃实质上抑制了表面小丘的生长，并且膜表面粗糙度降低至1nm。获得的结果可以促进开发使用薄半金属Bi膜的用于纳米线和量子阱结构制造的纳米技术。

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