Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects

机译：考虑热电子效应的亚微米n沟道MOSFET的集成Monte Carlo模拟

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The ensemble Monte Carlo algorithm for simulation of charge carrier transport in short channel MOSFET was developed. The mobile charge carrier concentration and electrostatic potential calculation procedures were worked out. The drain current increasing mechanisms caused by secondary holes transport in short channel MOSFET were considered. It was found out that at channel length about 0.1 μm the influence of secondary holes transport is quite significant.

机译：开发了用于模拟短沟道MOSFET中载流子传输的集成蒙特卡罗算法。制定了移动载流子浓度和静电势计算程序。考虑了由短沟道MOSFET中的次级空穴传输引起的漏极电流增加机制。发现在沟道长度为约0.1μm时，次级空穴传输的影响是相当显着的。

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来源
《Conference on Micro- and Nanoelectronics; 20031006-20031010; Zvenigorod; RU》|2003年|P.634-641|共8页
会议地点 Zvenigorod(RU);Zvenigorod(RU);Zvenigorod(RU)
作者
V. Borzdov; V. Galenchik; O. Zhevnyak; F. Komarov; A. Zyazulya;
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作者单位

Belarussian State University, Minsk, Belarus;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
monte carlo; hot electron effects; hole transport; MOSFET; drain current; avalanche multiplication;

机译：蒙特卡洛;热电子效应;空穴传输; MOSFET;漏极电流;雪崩倍增;

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专利

1. Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs ―Effects of Substrate Impurity [J] . Yoshinari KAMAKURA, Hironori RYOUKE, Kenji TANIGUCHI IEICE Transactions on Electronics . 2003,第3期

机译：集成蒙特卡罗/ Si MOSFET的反型层迁移率的分子动力学模拟-衬底杂质的影响
2. Monte Carlo Simulation of p- and n-channel GOI MOSFETs by Solving the Quantum Boltzmann Equation [J] . Gang Du, Xiaoyan Liu, Zhiliang Xia, IEEE Transactions on Electron Devices . 2005,第10期

机译：通过求解量子玻尔兹曼方程对p和n沟道GOI MOSFET进行蒙特卡罗模拟
3. Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling [J] . Frank D.J., Laux S.E. IEEE Transactions on Electron Devices . 1993,第11期

机译：在缩放极限下对p沟道和n沟道双栅Si MOSFET的蒙特卡罗模拟
4. Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects [C] . V. Borzdov, V. Galenchik, O. Zhevnyak, Society of Photo-Optical Instrumentation Engineers Conference on Micro- and Nanoelectronics . 2004

机译：集成蒙特卡洛模拟亚微米N沟道MOSFET的仿真，具有热电子效果
5. SLAPSHOT: An engineering-oriented Monte Carlo tool for hot carrier studies in deep submicron MOSFETs. [D] . Wang, Xiaolin. 1993

机译：SLAPSHOT：一种面向工程的蒙特卡洛工具，用于在深亚微米MOSFET中进行热载流子研究。
6. Determination of initial electron parameters by means of Monte Carlo simulations for the Siemens Artiste Linac 6 MV photon beam [O] . Taylan Tuğrul, Osman Eroğul 2019

机译：通过Monte Carlo模拟确定初始电子参数的西门子艺术家LinaC 6 MV光子束
7. Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs [O] . Donetti, Luca, Sampedro, Carlos, Gamiz, Francisco, 2015

机译：si纳米线mOsFET的多子带集合蒙特卡罗模拟

Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects

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