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MONTE CARLO ION IMPLANTATION SIMULATION METHOD, MONTE CARLO ION IMPLANTATION SIMULATOR, STORAGE MEDIUM WITH MONTE CARLO ION IMPLANTATION SIMULATION PROGRAM STORED THEREON AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
MONTE CARLO ION IMPLANTATION SIMULATION METHOD, MONTE CARLO ION IMPLANTATION SIMULATOR, STORAGE MEDIUM WITH MONTE CARLO ION IMPLANTATION SIMULATION PROGRAM STORED THEREON AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a simulation method which realizes reduction in calculation time. SOLUTION: The method has at least a step of classifying a position in a unit cell, where a trial grain is, for each of a plurality of basic cells, a step for classifying a proceeding direction of a trial grain, a step of obtaining the positions of atoms, which are specified from basic cell where a trial grain is and classification of a proceeding direction of a trial grain, and whose collision point is inside a basic cell where a trial grain is, referring to database, a step of setting thermal vibration displacement of atom by reference to a database, a step of calculating collision parameters and free flight distance of atoms by reference to the database and a step of selecting atoms, whose collision parameters are smaller than a predetermined collision parameter maximum value and whose free flight distance has a minimum positive value as colliding atoms.
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