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首页> 外文会议>Conference on micromachining and microfabrication process technology XIV; 20090127; San Jose, CA(US) >A High Sensitivity Hall Sensor Fabricated on a SOI Wafer Using Surface Micromachining Technique
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A High Sensitivity Hall Sensor Fabricated on a SOI Wafer Using Surface Micromachining Technique

机译：使用表面微加工技术在SOI晶片上制造高灵敏度霍尔传感器

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摘要

Hall sensors of high sensitivity have been designed and fabricated using the Micro-Electro-Mechanical System (MEMS) process. This paper presents the design and fabrication techniques used to obtain high sensitivity Hall sensors on a thin film polyimide flexible substrate. The devices are fabricated on a Silicon-on-Insulator (SOI), with boron-doped p-type Silicon as the active layer, using surface micromachining principles. The arrays of Hall devices are further transferred to a flexible substrate using a combination of wet and dry micromachining processes. The manufactured devices are stable over a range of temperature displaying relatively high magnetic sensitivity values. The recorded device sensitivities are in the range of 10μV/mA-G. The fabrication process aims at fabricating devices on a flexible substrate that enables to curve the Hall probes and thus use them for the measurement of radial magnetic fields and magnetic fields on curved surfaces. The volume of the active region is 1000×100×2 μm.
机译：已经使用微机电系统（MEMS）工艺设计和制造了高灵敏度的霍尔传感器。本文介绍了用于在薄膜聚酰亚胺柔性基板上获得高灵敏度霍尔传感器的设计和制造技术。该器件采用表面微机械加工原理在绝缘体上硅（SOI）上制造，掺硼p型硅作为有源层。使用湿法和干法微加工工艺的组合，将霍尔器件的阵列进一步转移到柔性基板上。所制造的器件在显示相对较高的磁灵敏度值的温度范围内是稳定的。记录的设备灵敏度在10μV/ mA-G范围内。该制造过程旨在在柔性基板上制造设备，该设备能够弯曲霍尔探头，从而将其用于径向磁场和曲面上磁场的测量。有源区的体积为1000×100×2μm。

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