Single-photon avalanche photodiode with improved structure using an innovative current bias scheme

机译：采用创新型电流偏置方案的结构得到改进的单光子雪崩光电二极管

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Single-photon avalanche photodiodes (SPADs) based on an improved structure were fabricated. Measurement results show that SPADs with a sharp rising I-V and gain curves were obtained by controlling SPAD's multiplication region thickness. The tunneling leakage current was reduced. Device's dark count rates (DCR) and single photon detection efficiency (SPDE) were measured using our innovative gated current bias scheme under different operating conditions to obtain a maximum SPDE. The experimental data demonstrated that SPADs' performance can be improved by decreasing the difference between the breakdown voltage and the punch through voltage.

机译：制作了基于改进结构的单光子雪崩光电二极管（SPAD）。测量结果表明，通过控制SPAD的乘法区域厚度，可以获得具有急剧上升的I-V和增益曲线的SPAD。降低了隧道漏电流。使用我们创新的门控电流偏置方案在不同的工作条件下测量器件的暗计数率（DCR）和单光子检测效率（SPDE），以获得最大SPDE。实验数据表明，通过减小击穿电压和击穿电压之间的差异，可以提高SPAD的性能。

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来源
《Conference on Optical Components and Materials; 20080121-23; San Jose,CA(US)》|2008年|P.iix|共2页
会议地点 San JoseCA(US)
作者
Yonglin Gu; Fow-Sen Choa; Yan Feng; Xiucheng Wu; Stewart Wu; Bing Guan; Peter Su; Michael A. Krainak;
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作者单位

Department of CSEE, University of Maryland Baltimore County, Baltimore, MD 21250;

Adtech Optics, City of Industry, CA 91748;

NASA Goddard Space Flight Center, Greenbelt, Maryland 20771;

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正文语种 eng
中图分类光学仪器;
关键词
single-photon avalanche photodiode; multiplication thickness; breakdown voltage; Geiger-mode; dark count rate; detection efficiency;

机译：单光子雪崩光电二极管倍增厚度击穿电压盖革模式暗计数率检测效率;

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7. Bias Voltage and Current Sense Circuits for Avalanche Photodiodes [O] . Jim Williams 2002

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Single-photon avalanche photodiode with improved structure using an innovative current bias scheme

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