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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Bi-layer and tri-layer lift-off processing for i-line and DUV lithography
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Bi-layer and tri-layer lift-off processing for i-line and DUV lithography

机译：i-line和DUV光刻的双层和三层剥离工艺

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摘要

Lift-off resist processing has been used for a variety of applications as a way of patterning metal layers using additive deposition methods. Many different processes have been used for this purpose, each involving either single or multiple layers of resist which are processed to form a reentrant profile. In this study, we examine two specific applications where lift-off processing is especially challenging. In the first case, a high resolution i-line lift-off process was needed for an application having severe surface topography caused by thick surrounding ohmic structures. Conventional bi-layer resist processing provided poor critical dimension control due to adjacent reflective surfaces and swing effects caused by resist thickness non-uniformity. A solution was found by incorporating a developable anti-reflective coating into the resist stack to reduce reflectance and resulting swing effects. The result was a lift-off process with high resolution used to image gate trenches over severe topology with critical dimension control maintained. The second application involved creating a T-gate profile using conventional optical lithography methods and modern positive DUV resists. Problems related to interlayer mixing and dissolution were overcome by introducing a photostabilization process to harden the stem layer and maintain its fidelity during the coating of subsequent resist layers. The result was an all optical, positive DUV tri-layer resist stack performed using two separate optical exposures, which produced a 200 nm T-shaped gate structure.
机译：剥离抗蚀剂处理已被用于多种应用中，作为使用附加沉积方法对金属层进行构图的一种方式。为此，已经使用了许多不同的方法，每个方法都涉及单层或多层抗蚀剂，将其加工成可重凹的轮廓。在这项研究中，我们研究了剥离处理特别具有挑战性的两个特定应用。在第一种情况下，由于周围厚厚的欧姆结构导致表面形貌严重，因此需要高分辨率i-line剥离工艺。由于相邻的反射表面和由抗蚀剂厚度不均匀引起的摆动效应，常规的双层抗蚀剂处理提供了差的临界尺寸控制。通过在抗蚀剂叠层中加入可显影的抗反射涂层来降低反射率和产生的摆动效应，从而找到了解决方案。结果是采用了高分辨率的剥离工艺，可以在严格的尺寸控制下在严峻的拓扑结构上对栅极沟槽进行成像。第二个应用程序涉及使用常规的光刻方法和现代的正DUV抗蚀剂创建T形栅极轮廓。通过引入光稳定化工艺来硬化茎干层并在后续抗蚀剂层的涂覆过程中保持其保真度，可以解决与层间混合和溶解有关的问题。结果是使用两个单独的光学曝光进行了全光学正DUV三层抗蚀剂堆叠，产生了200 nm T形栅极结构。

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