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首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >A Comparison between the Process Windows calculated with Full and Simplified Resist Models
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A Comparison between the Process Windows calculated with Full and Simplified Resist Models

机译：使用完全和简化抵抗模型计算的过程窗口之间的比较

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摘要

While numerical simulation is generally regarded as indispensable for wavefront engineering tasks such as OPC decoration and phase-shift mask design, full resist models are rarely used for this purpose. By "full resist models", we mean models derived from a physical, mechanistic description of the chemical response of the photoresist to exposure and the subsequent PEB and develop processes. More often, simplified models such as an aerial image threshold model or the Lumped Parameter Model (LPM) are used because these models are much faster and make optimization of optical extension technology more tractable. Simplified resist models represent a compromise between computational speed and simulation accuracy. The purpose of this study is to quantify the differences between the process windows calculated with simplified and full resist models. Our approach is first to fit the parameters in the simplified models to match results obtained with a full resist model, and then to compare the predictions of the simplified resist models with those obtained with the full model. We take two approaches to model tuning: mathematical derivation of relationships between the models, and least-squares fitting of FE matrix data for isolated and dense lines.
机译：虽然通常认为数值模拟对于波前工程任务（例如OPC装饰和相移掩模设计）是必不可少的，但很少将全抗蚀剂模型用于此目的。所谓“全抗蚀剂模型”，是指从光致抗蚀剂对曝光和随后的PEB和显影过程的化学反应的物理，机械描述得出的模型。更经常地，使用简化模型，例如航拍图像阈值模型或集总参数模型（LPM），因为这些模型要快得多，并且使光学扩展技术的优化更容易处理。简化的抗蚀剂模型代表了计算速度和仿真精度之间的折衷。这项研究的目的是量化使用简化和完整抗蚀剂模型计算的工艺窗口之间的差异。我们的方法是先将简化模型中的参数拟合以匹配使用完整抗蚀剂模型获得的结果，然后将简化抗蚀剂模型的预测与使用完整模型获得的结果进行比较。我们采用两种方法进行模型调整：模型之间关系的数学推导，以及孤立线和密集线的FE矩阵数据的最小二乘拟合。

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