Impact of scanner tilt and defocus on CD uniformity across field

机译：扫描仪倾斜和散焦对跨场CD均匀性的影响

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Gate critical dimension (CD) uniformity across field is a key parameter in total gate CD control; it is especially important for highly integrated microprocessor chip with large die size and high speed. Intensive study has been conducted to reveal the impact of scanner leveling tilt, defocus and illumination distribution on CD uniformity across field. Correspondingly CD in die range, vertical-horizontal CD bias, resist side wall angle and profile have all been characterized and monitored for each individual scanner. The monitoring methodology we have established enables us to maintain these CD parameters within fairly tight control range, and also provided efficient and accurate data on tool capability and marginality for running production.

机译：整个场的栅极临界尺寸（CD）均匀性是整个栅极CD控制中的关键参数。对于具有大芯片尺寸和高速度的高度集成的微处理器芯片而言，这一点尤其重要。已经进行了深入研究，以揭示扫描仪水平仪倾斜，散焦和照明分布对整个场的CD均匀性的影响。相应地，对于每个单独的扫描仪，都对模具范围内的CD，垂直水平的CD偏差，抗蚀剂侧壁角度和轮廓进行了表征和监控。我们建立的监控方法使我们能够将这些CD参数保持在相当严格的控制范围内，并且还提供了有关运行生产的工具能力和边际性的有效且准确的数据。

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来源
《Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA》|2002年|p.882-890|共9页
会议地点 Santa Clara CA(US)
作者
Shangting Detweiler; Simon Chang; Sandra Zheng; Patrick Gagnon; Chris Baum; Mark Boehm; Jay Brown; Cathy Fruga;
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作者单位

Texas Instruments, Inc.;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
process control monitoring; leveling tilt; defocusing; resist profile;

机译：过程控制监控；找平倾斜散焦抗蚀剂轮廓;

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Impact of scanner tilt and defocus on CD uniformity across field

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