• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Optical Microlithography XV Pt.2, Mar 5-8, 2002, Santa Clara, USA >Investigation of Iso-Focal Characteristics of Line Pattern in Dark Field Imaging
【24h】

Investigation of Iso-Focal Characteristics of Line Pattern in Dark Field Imaging

机译：暗场成像中线图案的等距特性研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Iso-focal characteristics of line patterns in dark field imaging are investigated by optical image calculations and basic experiments for application to gate pattern in current logic devices. In dark field imaging, isolated line image, that is bright line image, shows iso-focal characteristics at exposure level higher than that in usual printing condition. The effective image contrast is enough high to resolve the line pattern by the application of high contrast resist. By the investigation of imaging characteristics throughout pattern pitch, good focus latitude of DOF>～0.50μm is obtained for almost all pitches down to ～300 nm in KrF wavelength utilizing modified illumination and attenuating phase shift mask. It is also revealed that mask error enhancement factor (MEF) is less than 2.0 and exposure latitude, which is defined by (ΔCD/CD)/(Δexp.Dose/Exp. Dose), is smaller than ～1.0 throughout the pattern pitch. Although these very superior characteristics are obtained by this imaging, minimum image CD of isolated line with iso-focal characteristics is no smaller than ～180 nm for KrF wavelength even with extremely high NA. Also, range of line width with high DOF is not so large of ～100 nm for isolated line. However, by application of appropriate CD trimming, such as partial ashing, this method can be applied for gate pattern formation of logic devices in 100 nm node. Accordingly, we believe that this work will provide a cost effective method of gate pattern formation down to 100 nm node in use of KrF wavelength.
机译：通过光学图像计算和基础实验研究了暗场成像中线图案的等距特性，并将其应用于当前逻辑器件中的栅极图案。在暗场成像中，孤立线图像（即亮线图像）在高于常规打印条件下的曝光量下表现出等焦特性。有效的图像对比度足够高，可以通过使用高对比度抗蚀剂来分辨线条图案。通过研究整个图案间距的成像特性，利用改进的照明和衰减相移掩模，对于KrF波长中低至约300 nm的几乎所有间距，都可获得良好的聚焦自由度>〜0.50μm。研究还表明，掩模误差增强因子（MEF）小于2.0，并且由（ΔCD/ CD）/（Δexp.Dose/ Exp.Dose）定义的曝光范围在整个图案间距中均小于〜1.0。尽管通过这种成像获得了这些非常优异的特性，但是即使具有极高的NA，对于KrF波长，具有等焦点特性的隔离线的最小图像CD也不小于〜180 nm。此外，对于隔离线，具有高DOF的线宽范围也不至〜100 nm。但是，通过应用适当的CD修整（例如部分灰化），此方法可以应用于100 nm节点中逻辑器件的栅极图案形成。因此，我们相信这项工作将为使用KrF波长的低至100 nm节点的栅极图形形成提供一种经济有效的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号