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首页> 外文会议>Conference on Optical Microlithography XVII pt.1; 20040224-20040227; Santa Clara,CA; US >Monte-Carlo-based Analysis of Local CD Variation and Application to Establish Realistic Process and Tool Error Budgets
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Monte-Carlo-based Analysis of Local CD Variation and Application to Establish Realistic Process and Tool Error Budgets

机译：基于蒙特卡洛的局部CD变化分析和应用，以建立现实的过程和工具误差预算

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摘要

'Local' critical dimension (CD) variations, defined in this paper as those that impact transistor gate lengths within a localized 2.5 mm X 2.5 mm area of a semiconductor device, are of most critical interest to circuit performance, as these errors determine critical path delays. However, these errors are difficult to quantify in the fab and historically have been neglected by the lithography community. We combine an empirically anchored response surface model with a Monte Carlo engine to examine in detail the variation in local CD error across a typical lens field and as a function of various process parameters. This methodology allows for the correct statistical treatment of systematic and random errors, and enables the separation of in-die and die-to-die CD variations (as the former impact yield much more than the latter). We demonstrate that local CD variation defines the space of allowable process errors to a much greater extent than across-chip linewidth variation (ACLV) or die-to-die variation, and we use the output of the model to establish control limits for tool parameters for a candidate 90-nm-node alternating phase-shift gate process.
机译：“局部”临界尺寸（CD）变化，在本文中定义为影响半导体器件的局部2.5 mm X 2.5 mm区域内的晶体管栅极长度的变化，对电路性能至关重要，因为这些误差决定了关键路径延误。但是，这些误差很难在晶圆厂中量化，并且历史上一直被光刻界所忽略。我们将经验锚定响应表面模型与Monte Carlo引擎相结合，以详细检查整个典型镜片视野中CD局部误差的变化以及各种工艺参数的变化。这种方法可以对系统性错误和随机性错误进行正确的统计处理，并可以分离管芯和管芯之间的CD变化（因为前者的影响要远大于后者）。我们证明了局部CD变化比芯片间线宽变化（ACLV）或芯片到芯片的变化在更大程度上定义了允许的工艺误差空间，并且我们使用模型的输出来建立工具参数的控制极限用于候选的90 nm节点交替相移门工艺。

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