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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Application of a Multiple Wavelength Absorption Endpoint System in Photomask Dry Etcher
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Application of a Multiple Wavelength Absorption Endpoint System in Photomask Dry Etcher

机译：多波长吸收终点系统在光掩模干蚀刻机中的应用

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摘要

Recently dry etcher system is a key process technology in preparation of photomasks for next generation microelectronic device and endpoint detection system is an important part of the dry etch process, because mask CD (critical dimension) control of Cr mask is more critical issues than before. In this paper, we describe real time endpoint system which is operated by optical emission multiple wavelength absorption for dry etch process of binary photomask. The end point detection system absorbs optical emission signal in real time, using optical cable from plasma chamber in dry etcher, and the signal is absorbed 200～800nm wavelength for a lot of grating manufactured by etch angle. The signal detects endpoint of process by association of one or several wavelength. We have tested newly developed EPD (end point detection) system and installed at PKL's dry etcher system(Clean Plasma 6000 I), using various open area Cr mask with ZEP7000(3000A) resist. This study showed that multiple wavelength absorption technique is enough to detect endpoint down to 2% Cr loading masks and the EPD signal reproducibility was within 2% of EPD time at the same patterned masks.
机译：最近，干法刻蚀机系统是为下一代微电子设备准备光掩模的关键工艺技术，终点检测系统是干法刻蚀工艺的重要组成部分，因为与以前相比，掩模CD（临界尺寸）对Cr掩模的控制更为关键。在本文中，我们描述了实时端点系统，该系统通过光发射多波长吸收来运行，用于二元光掩模的干法蚀刻工艺。终点检测系统利用来自等离子室的光缆在干法刻蚀机中实时吸收光发射信号，对于许多由蚀刻角制造的光栅，该信号被吸收在200〜800nm的波长下。该信号通过一个或多个波长的关联来检测过程的终点。我们已经测试了新开发的EPD（端点检测）系统，并使用各种带有ZEP7000（3000A）抗蚀剂的开口Cr掩模，将其安装在PKL的干法蚀刻系统（清洁等离子体6000 I）中。这项研究表明，多波长吸收技术足以检测低至2％Cr负载掩模的终点，并且在相同的图案掩模下，EPD信号再现性在EPD时间的2％之内。

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