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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >The Characteristics of Residues and Optical Change of HT PSM during Stepwise Wet Cleaning and Optimization of HT PSM Cleaning Process
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The Characteristics of Residues and Optical Change of HT PSM during Stepwise Wet Cleaning and Optimization of HT PSM Cleaning Process

机译：逐步湿法清洗中HT PSM的残留特征和光学变化及HT PSM清洗工艺的优化

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摘要

A method of PSM cleaning has been developed and its cleaning performance was studied by changing H_2S0_4 / H_2O_2 mixture(SPM) and diluted standard cleaning-1 (SC-1) chemical ratio and controlling phase and transmittance of KrF HT PSM, within +- 3°and +- 0.3% respectively. The type of residue was scrutinized using KLA-Tencor SL3UV and scanning electron microscopy (SEM) during stepwise process and cleaning. X-ray photoelectron spectroscopy (XPS) was also employed to characterize the residues on the HT PSM surface. Diluted HF (DHF) and DHF/H2O2 mixture (FPM) were introduced to etch off the remaining defects on quartz after MoSiON dry etch process and also compared their results with the gas assisted etching (GAE) repair. It has turned out that DHF, FPM and GAE repair removed the remaining defects on quartz respectively. Our results demonstrate that approach of stepwise process inspection is very effective at identifying defects and their sources as they become evident at different process steps. Finally it was shown that diluted SC-1 with quick dump method followed by the direct displacement IPA dry is promising for the improvement of HT PSM cleaning efficiency and its residual impurities and causes no damage on the MoSiON surface. It is found that efficient and effective conventional chemical treatment, direct displacement IPA dry and GAE repair would be considered to be the integrated sequence to control the smallest particles for the HT PSM.
机译：通过改变H_2S0_4 / H_2O_2混合物（SPM）和稀释的标准清洗剂-1（SC-1）的化学比并控制KrF HT PSM的相和透射率在±3以内，已开发出一种PSM清洗方法，并研究了其清洗性能。 °和±0.3％。在逐步处理和清洁过程中，使用KLA-Tencor SL3UV和扫描电子显微镜（SEM）仔细检查残留物的类型。还使用X射线光电子能谱（XPS）表征HT PSM表面上的残留物。引入稀释的HF（DHF）和DHF / H2O2混合物（FPM）以蚀刻掉MoSiON干法刻蚀工艺后石英上的残留缺陷，并将其结果与气体辅助刻蚀（GAE）修复进行比较。事实证明，DHF，FPM和GAE维修分别消除了石英上的剩余缺陷。我们的结果表明，逐步检查过程的方法非常有效地识别缺陷及其来源，因为它们在不同的过程步骤中变得很明显。最终表明，采用快速倾倒法稀释的SC-1，然后直接置换IPA干燥，有望改善HT PSM的清洁效率及其残留杂质，并且不会对MoSiON表面造成损害。发现有效和有效的常规化学处理，直接置换IPA干燥和GAE修复将被视为控制HT PSM最小颗粒的综合步骤。

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