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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >A New Resolution Enhancement Method Realizing the Limit of Single Mask Exposure
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A New Resolution Enhancement Method Realizing the Limit of Single Mask Exposure

机译：实现单个掩模曝光极限的新分辨率增强方法

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IDEALSmile is introduced as a new exposure technique that realizes k_1=0.29. In this paper IDEALSmile is targeted for contact hole patterns (C/H). The results validate that it is possible to simultaneously expose not only k_1=0.32 half-pitch dense and isolated C/H patterns, but also different pitches using Canon FPA-5000ES3 (KrF, NA=0.73), which is impossible by conventional methods. Since these results are obtained using a binary mask and modified illumination with single exposure, there are no concerns with regards to a decrease in throughput and an increase in cost of ownership. However, one of the issues in fabricating C/H patterns is the mask error enhancement factor (MEEF). Our simulation has shown that IDEALSmile exhibits good MEEF. Although there are questions regarding optical microlithography for critical C/H patterning, the IDEALSmile exposure method has the potential to be the solution. By attaining k_1=0.32, printing 100nm C/H patterns can be achieved with a single exposure using KrF lithography, such as the Canon FPA-5000ES4 (KrF, NA=0.80). Furthermore, the IDEALSmile technique using ArF or F2 lithography will be effective for C/H patterns below the 100nm node. There is no doubt that optical microlithography will continue for some time.
机译：引入IDEALSmile作为一种新的曝光技术，可实现k_1 = 0.29。本文IDEALSmile适用于接触孔图案（C / H）。结果证实，使用佳能FPA-5000ES3（KrF，NA = 0.73），不仅可以同时曝光k_1 = 0.32半间距密集和孤立的C / H模式，而且还可以曝光不同的间距，这是传统方法无法实现的。由于这些结果是使用二元掩模和单次曝光的改进照明获得的，因此无需担心吞吐量降低和拥有成本增加。然而，制造C / H图案的问题之一是掩模误差增强因子（MEEF）。我们的仿真表明，IDEALSmile具有良好的MEEF。尽管对于用于关键C / H图案的光学微光刻存在疑问，但IDEALSmile曝光方法有可能成为解决方案。通过达到k_1 = 0.32，可以使用KrF光刻技术（如佳能FPA-5000ES4，KrF，NA = 0.80）进行一次曝光，即可打印100nm C / H图案。此外，使用ArF或F2光刻技术的IDEALSmile技术对于100nm节点以下的C / H图案将是有效的。毫无疑问，光学微光刻技术将持续一段时间。

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