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首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics III; 20040126-20040129; San Jose,CA; US >Study of silicon micromachining using diode-pumped solid-state lasers
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Study of silicon micromachining using diode-pumped solid-state lasers

机译：使用二极管泵浦固态激光器进行硅微加工的研究

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摘要

Laser micromachining of semiconductor materials such as silicon and sapphire has attracted more and more attention in recent years. High precision laser cutting and drilling processes have been successfully used in semiconductor, photonics, optoelectronics, and microelectromechanical system (MEMS) industries for applications including wafer dicing, scribing, direct via forming, and three-dimensional structuring. In the current study, Q-switched diode-pumped solid-state (DPSS) lasers have been used to scribe grooves on silicon wafer substrates at different pulsewidths (10 and 32 ns), pulse repetition rates (30, 40, and 50 kHz), focal lengths (100 and 53 mm), and wavelengths (355 and 266 nm). Experimental results have been compared between different laser parameters including pulsewidth, power level, pulse repetition rate, and wavelength. It has been found that at the same average power and same repetition rate, the grooves scribed by the longer pulsewidth laser are deeper, while the shorter pulsewidth laser produces better quality cuts. However, the same short pulsewidth laser can produce deeper grooves by increasing its repetition rate and power. Moreover, given the same laser parameters, the shorter focal length objective produces deeper grooves than the longer focal length one but it does not reduce the feature size proportionally due to the complications induced by debris and recast materials. Finally, with the same optical set-up and laser output parameters, it appears that the 266 nm laser does not provide obvious advantage when compared to the 355 nm laser in these particular silicon scribing experiments. The implications of these results are also discussed.
机译：近年来，诸如硅和蓝宝石之类的半导体材料的激光微加工引起了越来越多的关注。高精度激光切割和钻孔工艺已成功用于半导体，光子学，光电子学和微机电系统（MEMS）行业，其应用包括晶圆切割，划片，直接通孔成型和三维结构化。在当前的研究中，已使用Q开关二极管泵浦固态（DPSS）激光器在硅晶片基板上以不同的脉冲宽度（10和32 ns），脉冲重复频率（30、40和50 kHz）划刻凹槽，焦距（100和53毫米）和波长（355和266纳米）。实验结果已在不同的激光参数之间进行了比较，这些参数包括脉冲宽度，功率水平，脉冲重复频率和波长。已经发现，在相同的平均功率和相同的重复率下，较长的脉冲宽度激光器划出的凹槽更深，而较短的脉冲宽度激光器产生的切割质量更好。但是，同一短脉冲宽度的激光器可以通过增加其重复频率和功率来产生更深的凹槽。此外，在相同的激光参数下，较短的焦距物镜会比较长的焦距物镜产生更深的凹槽，但由于碎片和重铸材料引起的复杂性，它不会成比例地减小特征尺寸。最后，在相同的光学设置和激光输出参数下，在这些特定的硅划片实验中，与355 nm激光器相比，266 nm激光器似乎没有明显的优势。还讨论了这些结果的含义。

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