• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics Jan 21-24, 2002 San Jose, USA >Bimetallic Thermal Activated Films for Microfabrication, Photomasks and Data Storage
【24h】

Bimetallic Thermal Activated Films for Microfabrication, Photomasks and Data Storage

机译：用于微加工，光掩模和数据存储的双金属热活化膜

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Bimetallic thermal resist Bi/In has shown many applications in the areas of microfabrication, photomasks and data storage. Optical modeling shows that this class of thermal resists is wavelength invariant, and Bi/In can perform even better at 13.4 nm than at 248 nm due to the increase of absorption and the reduction of reflection. Images were successfully made on Bi/In films with both proximity (0.5 mm) and projection exposures with Nd-YAG laser running at 2nd harmonic wavelength. A new kind of developing solution (HCl:H_2O_2:H_2O=1:1:48) used at room temperature was found to be more effective in descumming than nitric acetic acid solution. Both have the etching selectivity of unexposed area to exposed area >60:1. Developed Bi/In resist shows good conductivity, which can be used as both a metal plating masking and seeding layer. 2 to 10 μm wide Cu and Ni lines and squares were successfully plated on the developed Bi/In patterns on glass slides and silicon wafers. Shelf test shows that the properties of Bi/In film do not change after being kept in a humid temperature-lifted environment for 10 days. Large optical transmission changes (OD>3.5 before laser exposure and <0.3 after exposure) indicate Bi/In can be used for direct-write photomasks and data storage media. Heat-treatment enhances the OD exposed/unexposed OD change.
机译：双金属热敏抗蚀剂Bi / In在微细加工，光掩模和数据存储领域已显示出许多应用。光学模型表明，这类热抗蚀剂的波长是不变的，并且由于吸收率的提高和反射率的降低，Bi / In在13.4 nm处的性能甚至要好于248 nm。使用在二次谐波波长下运行的Nd-YAG激光，成功地在Bi / In胶片上以近距离（0.5 mm）和投影曝光拍摄了图像。发现一种在室温下使用的新型显影液（HCl：H_2O_2：H_2O = 1：1：48）比硝酸乙酸溶液更有效地去除浮渣。两者都具有未曝光区域对> 60：1的曝光区域的蚀刻选择性。显影的Bi / In抗蚀剂显示出良好的导电性，可用作金属镀层掩膜和籽晶层。将2至10μm宽的Cu和Ni线和正方形成功地镀在载玻片和硅片上的Bi / In图形上。货架测试表明，Bi / In薄膜在潮湿的温度升高环境中放置10天后其性能没有变化。较大的光学透射率变化（激光曝光前OD> 3.5，曝光后<0.3）表明Bi / In可用于直接写入光掩模和数据存储介质。热处理增强了OD暴露/未暴​​露的OD变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号