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首页> 外文会议>Conference on Photonics: Design, Technology, and Packaging; Dec 10-12, 2003; Perth, Australia >Simulation of Current Spreading in Bottom-Emitting Vertical Cavity Surface Emitting Lasers for High Power Operation
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Simulation of Current Spreading in Bottom-Emitting Vertical Cavity Surface Emitting Lasers for High Power Operation

机译：高功率工作的底部发射垂直腔表面发射激光器中电流扩散的仿真

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摘要

In this paper, a numerical study was conducted on spreading of the current in a bottom emitting Vertical Cavity Surface Emitting Laser (VCSEL) with oxidation at the substrate. It was found that the current density profiles of etched VCSELs with small active diameters (< 125 μm) are similar to unetched VCSELs with a 500 μm active diameter. Larger active diameters of 150 μm to 225 μm also have higher density profiles than unetched VCSELs. The simulated current density profiles of large p-contact diameters are dependent on the oxide aperture diameter rather than the contact diameter. For smaller p-doped contact diameters, the density profiles are dependent on the contact diameter rather than the oxide aperture diameter. From current density profiles, higher output powers in the 980 nm wavelength regime are theoretically obtainable at lower threshold currents than previously reported. Maximum output powers of 489 mW, 690 mA and 787 mA at current thresholds of 102 mA, 271 mA and 442 mA were calculated for contact diameters of 50 μm, 100 μm and 150 μm, respectively, with a 50 μm oxide aperture. Depending on the geometric ratios of the simulated devices, required high output power VCSELs can be designed for specific applications.
机译：在本文中，对底部发射的垂直腔表面发射激光器（VCSEL）中电流在基板上氧化的扩散进行了数值研究。发现具有小有源直径（<125μm）的已蚀刻VCSEL的电流密度分布与具有500μm有源直径的未蚀刻VCSEL相似。 150μm至225μm的较大有源直径也具有比未蚀刻VCSEL更高的密度分布。大p接触直径的模拟电流密度曲线取决于氧化物孔径而不是接触直径。对于较小的p型掺杂接触直径，密度分布取决于接触直径而不是氧化物孔径。根据电流密度曲线，理论上可以在比以前报道的更低的阈值电流下获得980 nm波长范围内的更高输出功率。对于具有50μm氧化物孔径的接触直径分别为50μm，100μm和150μm的电流阈值，分别在102 mA，271 mA和442 mA的电流阈值下计算出489 mW，690 mA和787 mA的最大输出功率。根据模拟器件的几何比，可以为特定应用设计所需的高输出功率VCSEL。

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