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首页> 外文会议>Conference on Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technogoy Areas Jan 21-22, 2003 Santa Clara, California, USA >High Performance Polysilicon Circuits on Thin Metal Foils
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High Performance Polysilicon Circuits on Thin Metal Foils

机译：薄金属箔上的高性能多晶硅电路

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摘要

In recent years, there has been a growing interest in microelectronic fabrication of thin, flexible substrates. The utilization of flexible materials in processing in motivated by the need to have low weight, high strength microelectronic circuitry compatible with roll-to-roll processing. This can lead to a new era in the fabrication of reliable, low cost and highly versatile circuits for a wide variety of applications Thin metal foils offer a number of significant advantages over polymers, their main contender in this field. The most important asset of metals for substrate application is their compatibility with high temperature processing (up to 1000℃), which can lead to high mobility, low drift devices. This paper examines the performance of a variety of circuits fabricated on flexible metal foils, such as stainless steel, using laser crystallized polycrystalline silicon films. The basic performance characteristics and architecture of fabricated static and dynamic shift registers and ring oscillators are discussed. N-channel thin film transistors with an average mobility of 200cm~2/Vs were measured. Ring oscillator measurements indicate an average propagation delay of 1.38ns per inverter stage at a supply voltage of 15V. Both static and dynamic shift registers exhibit a maximum clock frequency beyond 1MHz. These circuits play a pivotal role for the fabrication of integrated display systems and most other large area electronics. This is the first time circuits of this complexity and performance have been successfully fabricated on flexible metal substrates.
机译：近年来，对薄的柔性衬底的微电子制造越来越感兴趣。由于需要具有与卷对卷加工兼容的低重量，高强度的微电子电路，促使在加工中利用柔性材料。这可以开创用于各种应用的可靠，低成本和高度通用电路制造的新纪元。薄金属箔比聚合物（在该领域的主要竞争者）具有许多明显的优势。用于基材的金属最重要的资产是它们与高温工艺（高达1000℃）的相容性，这可以导致高迁移率，低漂移的器件。本文研究了使用激光结晶的多晶硅薄膜在柔性金属箔（例如不锈钢）上制造的各种电路的性能。讨论了制造的静态和动态移位寄存器以及环形振荡器的基本性能特征和架构。测量了平均迁移率为200cm〜2 / Vs的N沟道薄膜晶体管。环形振荡器的测量结果表明，在15V的电源电压下，每个反相器级的平均传播延迟为1.38ns。静态和动态移位寄存器均具有超过1MHz的最大时钟频率。这些电路在集成显示系统和大多数其他大面积电子设备的制造中起着关键作用。这是第一次在柔性金属基板上成功制造出这种复杂性和性能的电路。

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