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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >365-nm ultraviolet light emitting diodes with an output power of over 400 mW
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365-nm ultraviolet light emitting diodes with an output power of over 400 mW

机译：365 nm紫外发光二极管，输出功率超过400 mW

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摘要

We fabricated high power ultraviolet (UV) light emitting diodes (LEDs), whose emission wavelength is around 365 nm. We found that, in order to improve the external quantum efficiency (η_(ex)) of UV LEDs, it is very important to reduce the optical self-absorption and the threading dislocation density (TDD) of epi-layers. Therefore, at first, UV LEDs epi-layers were grown on high-quality GaN templates (TDD = 2 x 10~8/cm~2) with sapphire substrates, and then the GaN templates and the sapphire substrates were removed by using laser-induced lift-off and polishing techniques. As a result, we obtained the low self-absorption and low TDD UV LEDs. When this UV LED was operated at a forward-bias pulsed current of 500 mA at room temperature (RT), the peak wavelength, the output power (P_o), the forward voltage (V_f) and the η_(ex) were 365 nm, 410 mW, 5.3 V, 24%, respectively. Moreover, at a forward-bias direct current of 500 mA at RT, P_o, V_f and η_(ex) were 360 mW, 5.0 V, 21%, respectively.
机译：我们制造了高功率紫外（UV）发光二极管（LED），其发射波长约为365 nm。我们发现，为了提高UV LED的外部量子效率（η_（ex）），降低外延层的光学自吸收和穿线位错密度（TDD）非常重要。因此，首先，在具有蓝宝石衬底的高质量GaN模板（TDD = 2 x 10〜8 / cm〜2）上生长UV LEDs外延层，然后通过激光去除GaN模板和蓝宝石衬底。感应剥离和抛光技术。结果，我们获得了低自吸收和低TDD UV LED。当该UV LED在室温（RT）下以500 mA的正向偏置脉冲电流运行时，峰值波长，输出功率（P_o），正向电压（V_f）和η_（ex）为365 nm，分别为410 mW，5.3 V，24％。此外，在RT的正向偏置直流电流为500 mA时，P_o，V_f和η_（ex）分别为360 mW，5.0 V，21％。

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