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首页> 美国卫生研究院文献>Nanomaterials >Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing
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Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing

机译：图案化双层ITO改善了激光发光二极管的紫外发光二极管的光输出

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摘要

A patterned double-layer indium-tin oxide (ITO), including the first unpatterned ITO layer serving as current spreading and the second patterned ITO layer serving as light extracting, was applied to obtain uniform current spreading and high light extraction efficiency (LEE) of GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Periodic pinhole patterns were formed on the second ITO layer by laser direct writing to increase the LEE of UV LED. Effects of interval of pinhole patterns on optical and electrical properties of UV LED with patterned double-layer ITO were studied by numerical simulations and experimental investigations. Due to scattering out of waveguided light trapped inside the GaN film, LEE of UV LED with patterned double-layer ITO was improved as compared to UV LED with planar double-layer ITO. As interval of pinhole patterns decreased, the light output power (LOP) of UV LED with patterned double-layer ITO increased. In addition, UV LED with patterned double-layer ITO exhibited a slight degradation of current spreading as compared to the UV LED with a planar double-layer ITO. The forward voltage of UV LED with patterned double-layer ITO increased as the interval of pinhole patterns decreased.
机译：施加图案化的双层铟锡氧化物（ITO），包括用作电流扩展的第一未图案化ITO层和用作光提取的第二图案化的ITO层，以获得均匀的电流扩展和高光提取效率（LEE）。 GaN基紫外线（UV）发光二极管（LED）。通过激光直接写入在第二ITO层上形成周期性的针孔图案，以增加UV LED的LEE。通过数值模拟和实验研究，研究了针孔图案间隔对带图案双层ITO的UV LED的光学和电学性质的影响。由于从捕获在GaN膜内部的波导光中散射出来，与具有平面双层ITO的UV LED相比，具有图案化双层ITO的UV LED的LEE有所改善。随着针孔图案间隔的减小，带有图案化双层ITO的UV LED的光输出功率（LOP）增大。此外，与具有平面双层ITO的UV LED相比，具有图案化双层ITO的UV LED表现出电流散布的轻微降低。带有图案化双层ITO的UV LED的正向电压随着针孔图案间隔的减小而增加。

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