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首页> 外文期刊>Optics Letters >Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes
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Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes

机译：飞秒激光在粗糙的ZnO上直接写入微孔以增强InGaN发光二极管的输出功率

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A significant enhancement of light extraction efficiency from InGaN light-emitting diodes (LEDs) with microhole arrays and roughened ZnO was experimentally demonstrated. The roughened ZnO was fabricated using an Ar and H-2 plasma treatment of ZnO films pre-coated on a p-GaN layer. When followed by a femtosecond laser direct writing technique, a periodic array of microholes could be added to the surface. The diameter of the microhole was varied by changing the output power of the femtosecond laser. Compared to conventional LEDs on the same wafer, the output power of LEDs with roughened ZnOs and a microhole (diameter of 2 mu m) array was increased by 58.4% when operated with an injection current of 220 mA. Moreover, it was found that LEDs fabricated with roughened ZnO and the microhole array had similar current-voltage (I-V) characteristics to those of conventional LEDs and no degrading effect was observed. (C) 2016 Optical Society of America
机译：实验证明了具有微孔阵列和粗糙ZnO的InGaN发光二极管（LED）的光提取效率显着提高。使用Ar和H-2等离子体处理的预涂在p-GaN层上的ZnO膜可以制造出粗糙的ZnO。当采用飞秒激光直接写入技术后，可以将微孔的周期性阵列添加到表面。通过改变飞秒激光器的输出功率来改变微孔的直径。与同一晶片上的常规LED相比，以220 mA的注入电流工作时，具有粗糙ZnO和微孔（直径2μm）阵列的LED的输出功率增加了58.4％。此外，发现用粗糙化的ZnO和微孔阵列制造的LED具有与常规LED相似的电流-电压（I-V）特性，并且未观察到降解效果。 （C）2016美国眼镜学会

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