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首页> 外文会议>Conference on Quantum Sensing and Nanophotonic Devices; 20040125-20040129; San Jose,CA; US >Intrinsic deep levels in semi-insulating silicon carbide
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Intrinsic deep levels in semi-insulating silicon carbide

机译：半绝缘碳化硅的本征深能级

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摘要

High temperature Hall effect and resistivity measurements have been made on undoped, high purity semi-insulating (HPSI) 4H SiC samples. Both physical vap or transport and high temperature chemical vapor deposition grown samples have been investigated. Resistivity measurements before and after annealing at temperatures up to 1800℃ are also reported. Hall and resistivity results are compared with low temperature photoluminescence results. The thermal activation energies for HPSI material taken from temperature dependent resistivity measurements varied from 0.9 to 1.5 eV. Hall effect measurements were made on several HPSI. In all cases the material was found to be n-type and the measured carrier concentration activation energies agreed within a few tens of percent with the resistivity activation energies. Mixed conduction analysis of the data suggests that the hole concentration was negligible in all of the samples studied. This suggests that the defects responsible for the semi-insulating properties have deep levels located in the upper half of the bandgap.
机译：在未掺杂的高纯度半绝缘（HPSI）4H SiC样品上进行了高温霍尔效应和电阻率测量。已经研究了物理气相或运输以及高温化学气相沉积生长的样品。还报道了在最高1800℃的温度下退火前后的电阻率测量结果。将霍尔和电阻率结果与低温光致发光结果进行比较。从与温度相关的电阻率测量中获得的HPSI材料的热活化能在0.9至1.5 eV之间变化。在几种HPSI上进行霍尔效应测量。在所有情况下，都发现该材料为n型，并且测得的载流子浓度激活能与电阻率激活能相差百分之几十。数据的混合传导分析表明，在所有研究的样品中，空穴浓度均可以忽略不计。这表明负责半绝缘性能的缺陷在带隙的上半部具有较深的水平。

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