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首页> 外文会议>Conference on Silicon-Based and Hybrid Optoelectronics Ⅳ Jan 23-24, 2002, San Jose, USA >THE ENERGY BAND DIAGRAMS OF PTSI-SI BARRIER WITH A HEAVILY-DOPED SURFACE NANOLAYER FORMED BY RECOIL IMPLANTATION
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THE ENERGY BAND DIAGRAMS OF PTSI-SI BARRIER WITH A HEAVILY-DOPED SURFACE NANOLAYER FORMED BY RECOIL IMPLANTATION

机译：通过反冲注入形成具有重掺杂表面纳米层的PTSI-SI势垒的能带图

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The development of Schottky barrier technology for creation of IR-photodetectors is caused by reduction of a potential barrier height used by formation of heavily-doped thin layer near to the semiconductor surface. We propose for this aim to form heavily-doped nanolayer in p-Si by recoil implantation of boron. Boron nm-thick film was deposited on the Si sample surfaces by cathode sputtering. After that the samples were irradiated by high intensity Al~+ beams extracted from pregenerated explosion-emission plasma. The samples are examined by secondary ion mass-spectrometry (SIMS). It is experimental established that profile of impirity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 10~(18)-10~(20) cm~(-3) and thickness of surface layer is 8-12 nm. The energy band diagrams of a PtSi - p-Si Schottky barrier with high-doped surface layer formed by recoil implantation were calculated for different parameters of barrier. It is shown, that effective barrier heights in PtSi-Si with recoil implantation formed surface 10 nm layer at surface concentration order 10~(20) cm~(-3) is reduce to 0.13 eV, corresponding to a cutoff wavelength of 9.5μm. Thus, the cutoff wavelength of the PtSi Schottky infrared detectors has been extended to the long wavelength infrared region by incorporating a p~+ doping layer with exponential profile of impirity distribution at the silicide/silicon interface.
机译：用于形成红外光电探测器的肖特基势垒技术的发展是由于降低势垒高度而引起的，该势垒高度是由于在半导体表面附近形成重掺杂薄层而形成的。为此，我们建议通过反冲注入硼在p-Si中形成重掺杂纳米层。通过阴极溅射将硼纳米厚的膜沉积在Si样品表面上。之后，用从预生成的爆炸发射等离子体中提取的高强度Al〜+束照射样品。样品通过二次离子质谱（SIMS）进行检查。实验确定表面层中杂质分布的分布是指数的。硅化物/硅界面处的掺杂浓度为10〜（18）-10〜（20）cm〜（-3），表面层的厚度为8-12nm。针对不同的势垒参数，计算了通过反冲注入形成的具有高掺杂表面层的PtSi-p-Si肖特基势垒的能带图。结果表明，在表面浓度为10〜（20）cm〜（-3）的情况下，利用反冲注入形成的10nm层表面的PtSi-Si的有效势垒高度降低至0.13 eV，对应的截止波长为9.5μm。因此，通过在硅化物/硅界面处掺入具有杂质分布指数分布的p +掺杂层，PtSi肖特基红外检测器的截止波长已扩展到长波长红外区域。

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