Ge photodetectors integrated in Si waveguides

机译：集成在Si波导中的Ge光电探测器

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This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 AAV and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.

机译：本文报道了在绝缘体波导中集成在硅中的锗光电探测器的理论和实验研究，用于在微蚀刻肋状波导中集成的金属-半导体-金属（MSM）光电探测器。使用飞秒脉冲的时间测量和光电RF实验已经获得了锗在硅光电探测器上的实验特性。对于电极间距为1μm的MSM结构，在6V偏置下测得的带宽在1.55μm波长下为25 GHz，响应度高达1 AAV，而在1V偏置下0.7μm电极间距下的带宽达到30GHz。

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来源
《Conference on Silicon Photonics; 20080121-24; San Jose,CA(US)》|2008年|P.iix|共2页
会议地点 San JoseCA(US)
作者
Laurent Vivien; Mathieu Rouviere; Jean-Marc Fedeli; Delphine Marris-Morini Jean-Francois Damlencourt; Loubna El Melhaoui; Eric Cassan; Xavier Le Roux; Paul Crozat; Juliette Mangeney; Suzanne Laval;
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作者单位

Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Bat. 220, Universite Paris-Sud XI, F-91405 ORSAY cedex - France;

STMicroelectronics16 rue Pierre et Marie Curie 37071 TOURS Cedex 2, France;

CEA-LETI, Minatec, 17 rue des Martyrs, F-38054 GRENOBLE;

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原文格式 PDF
正文语种 eng
中图分类半导体光电器件;
关键词
integrated photodetector; germanium; silicon; silicon on insulator (SOI); optical interconnects; microphotonics;

机译：集成光电探测器;锗;硅;绝缘体上硅（SOI）;光学互连;微光子学;

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专利

1. Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes [J] . Vinchant J.-F., Vilcot J.-P. Journal of Lightwave Technology . 1990,第12期

机译：单片集成波导/光电探测器的电子-空穴对生成速率：在单片集成波导/ p-i-n光电二极管建模中的应用
2. A Transition Metal Dichalcogenide Tunnel FET-Based Waveguide-Integrated Photodetector Using Ge for Near-Infrared Detection [J] . Joshi Swati, Dubey Prabhat Kumar, Kaushik Brajesh Kumar IEEE sensors journal . 2019,第20期

机译：Ge的基于过渡金属二硫属化物隧道FET的波导集成光电探测器用于近红外探测
3. High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers [J] . Xiao-Qian Du, Bu-Wen Cheng, Chun-Lai Xue, 中国物理：英文版 . 2019,第006期

机译：选择性集成外延生长Ge和Si层之间接触角小的高性能波导集成Ge / Si雪崩光电探测器
4. Ge Waveguide Photodetector on Wafer-bonded Ge-on-Insulator Substrate Monolithically Integrated with Amorphous Si Waveguide [C] . Jian Kang, Mitsuru Takenaka, Shinichi Takagi European Conference and Exhibition on Optical Communications . 2016

机译：与非晶硅波导单片集成的晶片键合绝缘体上锗衬底上的锗波导光电探测器
5. Waveguide integrated surface plasmon photodetector: Design, fabrication, and measurement. [D] . Akbari, Ali. 2010

机译：波导集成表面等离激元光电探测器：设计，制造和测量。
6. Polymer waveguide grating sensor integrated with a thin-film photodetector [O] . Fuchuan Song, Jing Xiao, Antonio Jou Xie, -1

机译：集成了薄膜光电探测器的聚合物波导光栅传感器
7. Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator [O] . Hongqiang Li, Sai Zhang, Zhen Zhang, 2020

机译：硅波导与锗光电探测器集成，用于光子集成的FBG询问器

Ge photodetectors integrated in Si waveguides

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