Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

机译：纳米尺度上的电子-声子相互作用理论：半导体表面和二维电子气

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A theory of electron relaxation for electron gases in semiconductor quantum well structures and at semiconductor surfaces is presented. The electron relaxation is described by quantum-kinetic equations. In the nonlinear optical response of a two dimensional electron gas in a GaN quantum well, polaronic signatures are clearly enhanced compared to the linear response, if the pump pulse is tuned to the polaron energy. For the phonon-induced electron relaxation at Si (001) surface structures, the interplay of bulk and surface states yields a complex temporal relaxation dynamics depending on the slab thickness.

机译：提出了一种用于半导体量子阱结构和半导体表面上的电子气的电子弛豫理论。电子弛豫由量子动力学方程式描述。在GaN量子阱中二维电子气的非线性光学响应中，如果将泵浦脉冲调谐到极化子能量，则与线性响应相比，极化子特征明显增强。对于声子引起的Si（001）表面结构的电子弛豫，本体和表面态的相互作用产生了复杂的时间弛豫动力学，具体取决于铸坯的厚度。

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来源
《Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials; 20080120-23; San Jose,CA(US)》|2008年|P.ixiii|共2页
会议地点 San JoseCA(US)
作者
N. Buecking; S. Butscher; M. Richter; C. Weber; S. Declair; M. Woerner; K. Reimann; P. Kratzer; M. Scheffler; A. Knorr;
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Institut fuer Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin, Germany;

Mathematical Physics, Lund University, Box 118, 22100 Lund, Sweden;

Max Born Institut fur Nichtlineare Op;

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8. Quantum Theory of Magnetotransport in Two-Dimensional Systems with Electron-Impurity, Electron-Phonon and Electron-Electron Interactions [R] . Grabowski, M., Madhukar, A. 1982

机译：具有电子杂质，电子 - 声子和电子 - 电子相互作用的二维系统中磁传输的量子理论

Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

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