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首页> 外文会议>Current developments in lens design and optical engineering XII; and Advances in thin film coatings VII >Effects of Substrate heating and Vacuum Annealing on Optical and Electrical Properties of Alumina-Doped ZnO Films Deposited by DC Magnetron Sputtering
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Effects of Substrate heating and Vacuum Annealing on Optical and Electrical Properties of Alumina-Doped ZnO Films Deposited by DC Magnetron Sputtering

机译：衬底加热和真空退火对直流磁控溅射沉积氧化铝掺杂ZnO薄膜光学和电学性质的影响

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Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al_O_3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 ℃ and 250 ℃. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 ℃ and 450 ℃ in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10~(-3) Ω-cm, 6.38 cm~2/Vs, 5.08×10~(20)#/cm~3, and 31.48 nm respectively, in vacuum annealing of 450 ℃. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10~(-4) Ω-cm, 6.32 cm~2/Vs, 1.13×10~(21) #/cm~3, and 31.56 nm, respectively, when substrate temperature was at 250 ℃. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.
机译：氧化铝掺杂的氧化锌（AZO）膜在光学和光电设备中具有广泛的应用范围。 AZO薄膜具有高透明度，对氢等离子体的高稳定性以及与替代ITO薄膜相比低成本的优势。通过直流（DC）磁控溅射从陶瓷ZnO：Al_O_3靶制备AZO膜。在两种不同条件下比较了AZO膜。首先是基板加热工艺，其中在不同的基板温度，室温，150℃和250℃下沉积AZO膜。第二种是真空退火工艺，其中将在室温下沉积的AZO膜分别在250℃和450℃下进行真空退火。用紫外可见分光光度计，霍尔效应测量设备，X射线衍射和扫描电子显微镜研究了薄膜的光学性能，电学性能，晶粒尺寸和表面结构性能。 AZO薄膜的电阻率，载流子迁移率，载流子浓度和晶粒尺寸分别为1.92×10〜（-3）Ω-cm，6.38 cm〜2 / Vs，5.08×10〜（20）＃/ cm〜3和31.48分别在450℃的真空退火中进行。 AZO薄膜的电阻率，载流子迁移率，载流子浓度和晶粒尺寸分别为8.72×10〜（-4）Ω-cm，6.32 cm〜2 / Vs，1.13×10〜（21）＃/ cm〜3和31.56基板温度为250℃时分别为100 nm。对于直流磁控溅射沉积的AZO膜，基板加热工艺要优于真空退火工艺。

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