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3C(beta)-SiC-on-insulator waveguide structures for modulators and sensor systems

机译:用于调制器和传感器系统的3Cβ-SiC-绝缘体上波导结构

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Abstract: In this work planar and rib $beta@-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO$-2$/ layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI. The losses have been measured at 1.3 and 1.55$mu@m. Rib waveguides were fabricated using dry-etching. These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology. !16
机译:摘要:在这项工作中,研究了绝缘体上的平面和肋形$ beta @ -SiC-SiC波导。通过两种不同的方法来制造波导。在第一个使用类似于SIMOX的工艺过程中,通过在SiC / Si晶片中分两步进行氧的高能离子注入,形成了一层SiO $ -2 $ /掩埋层。对于第二种类型的波导,我们在SOI上使用了SiC的异质外延。损失估计为1.3和1.55μm@m。肋状波导是使用干法刻蚀制造的。这些类型的波导对于与硅技术兼容的高速基于硅的光子器件具有巨大的潜力。 !16

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