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首页> 外文会议>Design, Fabrication, and Characterization of Photonic Devices >Theoretical comparison of 0.78 tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 um
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Theoretical comparison of 0.78 tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 um

机译：0.75％拉伸应变的InGaAs / InAlGaAs和InGaAs / InGaAsP量子阱激光器在1.55 um发射时的理论比较

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Abstract: 0.78 percent tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 $mu@m are studied theoretically. Independent of material system, large band discontinuity results in a large number of subbands and high density of states, which gives rise to lower optical gain and T$-0$/. Besides, the 3 dB bandwidth is increased and is more resilient to high temperature. InGaAs/InAlGaAs QW lasers can achieve threshold of 572 Acm$+$MIN@2$/, T$-0$/ of 45K and 3 dB bandwidth of 38 GHz at gain of 100 cm$+$MIN@1$/. InGaAs/InGaAsP QW lasers can only achieve 22 GHz. This suggests that the low conduction band offset ratio limits the bandwidth of InGaAs/InGaAsP QW lasers. InGaAs/InAlGaAs laser, on the other hand, could be designed to give low threshold, large bandwidth and high T$-0$/. !35
机译：摘要：理论上研究了在1.55μm@ m处发射的0.78％拉伸应变InGaAs / InAlGaAs和InGaAs / InGaAsP QW激光器。独立于材料系统，大的频带不连续性导致大量的子频带和高状态密度，这导致较低的光学增益和T $ -0 $ /。此外，3 dB带宽增加了，并且对高温更有弹性。 InGaAs / InAlGaAs QW激光器的增益为100 cm $ + $ MIN @ 1 $ /时，可以达到572 Acm $ + MIN @ 2 $ /的阈值，45K的T $ -0 $ /和38 GHz的3 dB带宽。 InGaAs / InGaAsP QW激光器只能达到22 GHz。这表明低导带偏移比限制了InGaAs / InGaAsP QW激光器的带宽。另一方面，可以将InGaAs / InAlGaAs激光器设计为具有低阈值，大带宽和高T $ -0 $ /的设计。 ！35

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