Design friendly double patterning

机译：设计友好的双重图案

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Double patterning using 193nm immersion has been adapted as the solution to enable 2x nm technology nodes until thearrival of EUV tools. As a result the past few years have seen a huge effort in creating double patterning friendly designflows. These flows

机译：使用193nm浸没的双图案已被用作解决方案，以实现2x nm技术节点，直到EUV工具问世。结果，在过去的几年中，在创建双重图案友好的设计流程方面付出了巨大的努力。这些流量

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来源
《Design for manufacturability through design-process integration VI.》|2012年|P.07.1-07.12|共12页
会议地点 San Jose CA(US)
作者
Emek Yesilada;
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作者单位

STMicroelectronics (France);

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
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4. Pattern matching for identifying and resolving non-decomposition-friendly designs for Double Patterning Technology (DPT) [C] . Lynn T.-N. Wang, Vito Dai, Luigi Capodieci Design for manufacturability through design-process integration VII . 2013

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8. Measured Radiation Patterns of Full-Scale HF Rhombics and Other Antennas at a Large Antenna Farm. Appendix B. Log-Periodic,Doublet,and Omnidirectional Antenna Patterns. [R] . barker, g. e. koehrsen, g. d. 1974

机译：大型天线场中满量程HF菱形和其他天线的辐射测量模式。附录B.对数周期，双峰和全向天线模式。

Design friendly double patterning

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