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首页> 外文会议>Design and Process Integration for Microelectronic Manufacturing II >Impact of Inter-mask CD error on OPC Accuracy in Resolution of 90-nm and Below
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Impact of Inter-mask CD error on OPC Accuracy in Resolution of 90-nm and Below

机译：掩模间CD错误对90nm及以下分辨率的OPC精度的影响

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摘要

Because of the mask error enhancement factor (MEEF), iso-dense biases of mask patterns are amplified when the image is transferred to a wafer. A slight critical-dimension (CD) difference between an OPC test mask and an OPCed mask may cause a significant OPC error on the wafer. The impact of the mask CD error on OPC accuracy has never been evaluated, however, to evaluate the impact of the inter-mask CD error (IMCDE), we measured the CD errors of various line-and-space patterns on attenuated phase-shifting masks for ArF exposure. We investigated the effect of IMCDE and the iso-dense biases of test-mask patterns on OPC accuracy. We found that a degree of IMCDE is tolerable in attenuated phase-shifting ArF masks. This tolerable degree of IMCDE is useful to gauge the effectiveness of the OPC, with an eye to developing a lithographic process for semiconductor production. Furthermore, based on experimental results showing that a wafer CD is controllable when scanner conditions such as numerical aperture (NA) and partial coherence factor (sigma) are optimized, a new mask-matching method to compensate for the IMCDE is proposed.
机译：由于掩模误差增强因子（MEEF），当图像转移到晶圆上时，掩模图案的等密度偏压会被放大。 OPC测试掩膜和OPC掩膜之间的临界尺寸（CD）略有不同可能会导致晶圆上出现明显的OPC错误。掩膜CD误差对OPC精度的影响尚未得到评估，但是，为了评估掩膜间CD误差（IMCDE）的影响，我们测量了各种线和空间图案对衰减相移的CD误差ArF曝光用光罩。我们研究了IMCDE和测试掩模图案的等密度偏差对OPC精度的影响。我们发现，在衰减的相移ArF掩模中，IMCDE的程度是可以容忍的。 IMCDE的这种可容忍度有助于评估OPC的有效性，并着眼于开发用于半导体生产的光刻工艺。此外，基于实验结果表明，当优化诸如数值孔径（NA）和部分相干因子（sigma）等扫描仪条件时，晶圆CD是可控的，因此提出了一种新的掩模匹配方法来补偿IMCDE。

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