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Lithography oriented DfM for 65nm and beyond

机译：面向光刻的65nm及更高的DfM

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摘要

As Technology node is advancing, we are forced to use relatively low resolution lithography tool. And these situation results in degradation of pattern fidelity. hot spot, lithographic margin-less spot, appears frequently by conventional design rule methodology. We propose two design rule methodology to manage hot spot appearances in the stage of physical pattern determination. One is restricted design rule, under which pattern variation is very limited, so hot spot generation can be fully controlled. Second is complex design rule combined with lithography compliance check (LCC) and hot spot fixing (HSF). Design rule, by itself, has a limited ability to reduce hot spot generation. To compensate the limited ability, both LCC including optical proximity correction and process simulation for detecting hot spots and HSF for fixing the detected hot spots are required. Implementing those methodology into design environment, hot spot management can be done by early stage of physical pattern determination. Also newly developed tool is introduced to help designers easily fixing hot spots. By using this tool, the system of automatic LCC and HSF has been constructed. hot spots-less physical patterns through this system can be easily obtained and turn-back from manufacture to design can be avoided.
机译：随着技术节点的发展，我们被迫使用相对较低分辨率的光刻工具。这些情况导致图案保真度下降。热点，平版印刷术的无边距点，是通过传统的设计规则方法经常出现的。我们提出了两种设计规则方法来管理物理图案确定阶段中的热点外观。一种是受限制的设计规则，在该规则下，图案变化非常有限，因此可以完全控制热点的产生。其次是复杂的设计规则，结合了光刻一致性检查（LCC）和热点固定（HSF）。设计规则本身具有减少热点生成的能力有限。为了补偿有限的能力，既需要包括光学邻近校正的LCC，也需要用于检测热点的过程仿真以及用于固定检测到的热点的HSF。将这些方法实施到设计环境中，可以在物理模式确定的早期阶段完成热点管理。还引入了新开发的工具，以帮助设计人员轻松修复热点。通过使用此工具，已构建了自动LCC和HSF系统。通过该系统可以轻松获得无热点的物理图案，并且可以避免从制造到设计的折返。

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