TENSILE STRAIN IN Si DUE TO EXPANSION OF LATTICE SPACINGS IN CeO_2 EPITAXIALLY GROWN ON Si (111)

机译：由于Si（111）上生长的CeO_2表观延展晶格间距导致Si的拉伸应变

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The strain in Si, on which single-crystalline CeO_2 gate oxide was epitaxially grown, was investigated by evaluating lattice spacings in CeO_2 and Si precisely. It is found that the lattice spacings in epitaxial CeO_2 isotropically expanded by -1%, compared with those in bulk polycrystalline CeO_2. The oxygen-defect-induced state was observed in the CeO_2 valence band edge. The decrease of Coulomb interaction in ionic oxide due to the oxygen defects may induce the expansion of the lattice spacings in CeO_2. It is clarified that Si at 50 nm depth from the CeO_2/Si interface was tensile strained owing to the expansion of the lattice spacings in CeO_2.

机译：通过精确评估CeO_2和Si中的晶格间距，研究了外延生长有单晶CeO_2栅氧化物的Si中的应变。结果表明，与块状多晶CeO_2相比，外延CeO_2的晶格间距各向同性地扩大了-1％。在CeO_2价带边缘观察到氧缺陷诱导状态。由于氧缺陷导致的离子氧化物中库仑相互作用的降低可能导致CeO_2中晶格间距的扩大。可以看出，由于CeO_2中晶格间距的扩大，距CeO_2 / Si界面50 nm处的Si受到拉伸应变。

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《Electrochemical Society Meeting and International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues; 20031012-20031016; Orlando,FL; US》|2003年|P.155-163|共9页
会议地点 Orlando FL(US);Orlando FL(US)
作者
Y. Nishikawa; D. Matsushita; N. Satou; M. Yoshiki; T. Schimizu; T. Yamaguchi; H. Satake; N. Fukushima;
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Advanced LSI Technology Laboratory, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan;

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正文语种 eng
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专利

1. Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111) [J] . Daisuke MATSUSHITA, Yukie NISHIKAWA, Nobutaka SATOU, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4BPt1期

机译：在Si（111）上直接生长的CeO_2中晶格间距的扩大导致介电常数的提高
2. Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y_2O_3 epitaxial films on Si (111) [J] . Y. J. Lee, W. C. Lee, M. L. Huang, Journal of Vacuum Science & Technology . 2010,第3期

机译：Si（111）上的纳米厚分子束外延生长的Y_2O_3外延膜的晶格应变和原位化学深度分析
3. Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111) [J] . Shinji JOUMORI, Kaoru NAKAJIMA, Motofumi SUZUKI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第11B期

机译：Si（111）上生长的超薄外延CeO_2薄膜的结构
4. TENSILE STRAIN IN Si DUE TO EXPANSION OF LATTICE SPACINGS IN CeO-2 EPITAXIALLY GROWN ON Si (111) [C] . Y. Nishikawa, D. Matsushita, N. Satou ECS Meeting . 2003

机译：Si中的拉伸应变由于在Si（111）上的CEO-2中的晶格间距扩展
5. Characterization and nanopatterning of functional organics on hydrogen-terminated silicon(111) and epitaxially grown graphene substrates. [D] . Kellar, Joshua A. 2009

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TENSILE STRAIN IN Si DUE TO EXPANSION OF LATTICE SPACINGS IN CeO_2 EPITAXIALLY GROWN ON Si (111)

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