Comparative study of x-ray lithography process optimization using theoretical and empirical tools

机译：使用理论和经验工具进行X射线光刻工艺优化的比较研究

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Abstract: This paper presents the results of a simple orthogonal matrix experiment testing photoresist performance as a function of post exposure bake temperature and time. The dose latitude of quarter micron line/space pairs is found under these conditions. These empirical results are compared against those produced under identical process conditions but utilizing simulated images based on resist dissolution rate data. The matrix responses of the empirical and simulated data sets are compared. Also, these linewidth results are compared against resist characteristic data produced under identical process conditions. The matrix responses of the three data sets are compared. !10

机译：摘要：本文介绍了一个简单的正交矩阵实验的结果，该实验测试光刻胶性能与曝光后烘烤温度和时间的函数关系。在这些条件下发现了四分之一微米线/空间对的剂量范围。将这些经验结果与在相同工艺条件下但使用基于抗蚀剂溶解速率数据的模拟图像得到的结果进行比较。比较了经验数据集和模拟数据集的矩阵响应。同样，将这些线宽结果与在相同工艺条件下产生的抗蚀剂特性数据进行比较。比较了三个数据集的矩阵响应。！10

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来源
《Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV》|1994年|p.83-94|共12页
会议地点 San Jose CA(US)
作者
Whitson G. Waldo; Motorola Inc.; Stoughton; WI; USA; Cristiano Capasso; Univ. of Wisconsin/Madison; Stoughton; WI; USA; Azalia A. Krasnoperova; Univ. of Wisconsin/Madison; Stoughton; WI; USA; Mumit Khan; Univ. of Wisconsin/Madison; Stoughton; WI; USA; Jam;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Comparative study of x-ray lithography process optimization using theoretical and empirical tools [C] . Whitson G. Waldo, Cristiano Capasso, Azalia A. Krasnoperova, Conference on electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing . 1994

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机译：共同优化掩模，过程和光刻 - 工具参数以扩展过程窗口

Comparative study of x-ray lithography process optimization using theoretical and empirical tools

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