Abstract: The development of a laboratory EUV lithography toolbased on a laser plasma source, a 10x Schwarzschildcamera, and a magnetically levitated wafer stage ispresented. Interferometric measurements of the cameraaberrations are incorporated into physical-opticssimulations to estimate the EUV imaging performance ofthe camera. Experimental results demonstrate thesuccessful matching of five multilayer reflectingsurfaces, coated to specification for a wide range offigure and incidence angle requirements.High-resolution, 10x-reduction images of a reflectionmask are shown. !9
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